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Growth of high frequency SiGe heterojunction bipolar transistors structures
Vise andre og tillknytning
2002 (engelsk)Inngår i: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T101, s. 45-48Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The growth of heterojuntion bipolar transistor structures using chemical vapor deposition has been investigated. Generation of defects in selectively or nonselectively grown collector layers using arsenic as the dopant has been studied. Minimizing the defect density in SiGe base layers by optimizing the growth rate has also been investigated in detail. High resolution reciprocal lattice mapping, atomic force microscopy and secondary ion mass spectrometry have been used as the main characterization tools.

sted, utgiver, år, opplag, sider
2002. Vol. T101, s. 45-48
Emneord [en]
chemical-vapor-deposition, si1-xgex, epitaxy, layers
Identifikatorer
URN: urn:nbn:se:kth:diva-22075ISI: 000179465600012OAI: oai:DiVA.org:kth-22075DiVA, id: diva2:340773
Merknad
QC 20100525Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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