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As- or P-doped Si layers grown by RPCVD for emitter application in SiGeCHBTs
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
KTH, Tidigare Institutioner, Mikroelektronik och informationsteknik, IMIT.
Vise andre og tillknytning
2004 (engelsk)Inngår i: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T114, s. 34-36Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure chemical vapor deposition reactor using silane as the silicon source gas. Characteristics such as the carrier concentration, conductivity, surface morphology, and thermal stability of the polycrystalline-silicon layer as well as the influence this layer has on a SiGeC transistor structure during the drive-in step area studied. The active carrier concentration of the as-grown sample is strongly dependent on the deposition temperature, especially arsenic doped layers which exhibit more than one order of magnitude difference. However, the carrier concentration for the As- or P-doped layer were comparable to that of a standard in-situ doped poly-crystalline layer after a dopant activation at 925 degrees C for 10s.

sted, utgiver, år, opplag, sider
2004. Vol. T114, s. 34-36
Emneord [en]
chemical-vapor-deposition
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-23235DOI: 10.1088/0031-8949/2004/T114/007ISI: 000204272000008Scopus ID: 2-s2.0-39549101428OAI: oai:DiVA.org:kth-23235DiVA, id: diva2:341933
Merknad
QC 20100525 QC 20111031Tilgjengelig fra: 2010-08-10 Laget: 2010-08-10 Sist oppdatert: 2017-12-12bibliografisk kontrollert

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Suvar, ErdalHaralson, ErikHållstedt, JuliusRadamson, Henry H.Östling, Mikael
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