Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
2010 (engelsk)Inngår i: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T140, s. 014012-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10(10)-10(11) cm(-2). The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

sted, utgiver, år, opplag, sider
2010. Vol. T140, s. 014012-
Emneord [en]
INDUCED GAIN DEGRADATION, IRRADIATION, TRANSISTORS
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-27662DOI: 10.1088/0031-8949/2010/T141/014012ISI: 000284694500013Scopus ID: 2-s2.0-79952365555OAI: oai:DiVA.org:kth-27662DiVA, id: diva2:382130
Merknad
23rd Nordic Semiconductor Community Univ Iceland, Reykjavik, ICELAND, JUN 14-17, 2009 QC 20101229Tilgjengelig fra: 2010-12-29 Laget: 2010-12-20 Sist oppdatert: 2017-12-11bibliografisk kontrollert
Inngår i avhandling
1. Impact of Ionizing Radiation on 4H-SiC Devices
Åpne denne publikasjonen i ny fane eller vindu >>Impact of Ionizing Radiation on 4H-SiC Devices
2012 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. However, the radiation tolerance and reliability of SiC-based devices needs to be understood by testing devices  under controlled radiation environments. These kinds of studies have been previously performed on diodes and MESFETs, but multilayer devices such as bipolar junction transistors (BJT) have not yet been studied.

In this thesis, SiC material, BJTs fabricated from SiC, and various dielectrics for SiC passivation are studied by exposure to high energy ion beams with selected energies and fluences. The studies reveal that the implantation induced crystal damage in SiC material can be partly recovered at relatively low temperatures, for damag elevels much lower than needed for amorphization. The implantation experiments performed on BJTs in the bulk of devices show that the degradation in deviceperformance produced by low dose ion implantations can be recovered at 420 oC, however, higher doses produce more resistant damage. Ion induced damage at the interface of passivation layer and SiC in BJT has also been examined in this thesis. It is found that damaging of the interface by ionizing radiation reduces the current gain as well. However, for this type of damage, annealing at low temperatures further reduces the gain.

Silicon dioxide (SiO2) is today the dielectric material most often used for gate dielectric or passivation layers, also for SiC. However, in this thesis several alternate passivation materials are investigated, such as, AlN, Al2O3 and Ta2O5. These materials are deposited by atomic layer deposition (ALD) both as single layers and in stacks, combining several different layers. Al2O3 is further investigated with respect to thermalstability and radiation hardness. It is observed that high temperature treatment of Al2O3 can substantially improve the performance of the dielectric film. A radiation hardness study furthermore reveals that Al2O3 is more resistant to ionizing radiation than currently used SiO2 and it is a suitable candidate for devices in radiation rich applications.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2012. s. iv, 71
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2012:02
Emneord
Silicon carbide, ionizing radiation, bipolar junction transistors, reliability, surface passivation, high-k dielectrics, MIS, radiation hardness
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-60763 (URN)978-91-7501-225-4 (ISBN)
Disputas
2012-02-03, Sal C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:00 (engelsk)
Opponent
Veileder
Merknad
QC 20120117Tilgjengelig fra: 2012-01-17 Laget: 2012-01-14 Sist oppdatert: 2012-01-17bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Hallen, Anders

Søk i DiVA

Av forfatter/redaktør
Usman, MuhammadHallen, AndersGhandi, RezaDomeij, Martin
Av organisasjonen
I samme tidsskrift
Physica Scripta

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 128 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf