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Strained-Silicon Heterojunction Bipolar Transistor
Vise andre og tillknytning
2010 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 57, nr 6, s. 1243-1252Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Experimental and modeling results are reported for high-performance strained-silicon heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a compressively strained Si0.7Ge0.3 base on top of a relaxed Si0.85Ge0.15 collector. By using a Si0.85Ge0.15 virtual substrate strain platform, it is possible to utilize a greater difference in energy band gaps between the base and the emitter without strain relaxation of the base layer. This leads to much higher gain, which can be traded off against lower base resistance. There is an improvement in the current gain beta of 27x over a conventional silicon bipolar transistor and 11x over a conventional SiGe HBT, which were processed as reference devices. The gain improvement is largely attributed to the difference in energy band gap between the emitter and the base, but the conduction band offset between the base and the collector is also important for the collector current level.

sted, utgiver, år, opplag, sider
2010. Vol. 57, nr 6, s. 1243-1252
Emneord [en]
Band-gap engineering, BiCOMS integration, stained-Si heterojunction bipolar transistor (HBT)
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Identifikatorer
URN: urn:nbn:se:kth:diva-27860DOI: 10.1109/TED.2010.2045667ISI: 000277884100008Scopus ID: 2-s2.0-77952731669OAI: oai:DiVA.org:kth-27860DiVA, id: diva2:385866
Merknad
QC 20110112Tilgjengelig fra: 2011-01-12 Laget: 2011-01-03 Sist oppdatert: 2017-12-11bibliografisk kontrollert

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Malm, Bengt GunnarHellström, Per-Erik

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