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High Voltage (2.8 kV) Implantation-free 4H-SiC BJTs with Long-TermStability of the Current Gain
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-8108-2631
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
Vise andre og tillknytning
2011 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, nr 8, s. 2665-2669Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this work, implantation-free 4H-SiC BJTs with high breakdown of 2800 V have been fabricated utilizing acontrolled two-step etched junction termination extension (JTE). The small area devices show a maximum dc current gainof 55 at Ic=0.33 A (JC=825 A/cm2) and VCESAT = 1.05 V at Ic = 0.107 A that corresponds to a low ON-resistance of 4mΩ·cm2. The large area device have a maximum dc current gain of 52 at Ic = 9.36 A (JC=289 A/cm2) and VCESAT = 1.14 Vat Ic = 5 A that corresponds to an ON-resistance of 6.8 mΩ·cm2. Also these devices demonstrate a negative temperaturecoefficient of the current gain (β=26 at 200°C) and a positive temperature coefficient of the ON-resistance (RON = 10.2mΩ·cm2 at 200°C). The small area BJT shows no bipolar degradation and low current gain degradation after 150 Hrs stressof the base-emitter diode with current level of 0.2A (JE=500 A/cm2). Also, large area BJT shows a VCE fall time of 18 nsduring turn-on and a VCE rise time of 10 ns during turn-off for 400 V switching characteristics.

sted, utgiver, år, opplag, sider
2011. Vol. 58, nr 8, s. 2665-2669
Emneord [en]
Bipolar junction transistors (BJT), power transistor, silicon carbide
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-29780DOI: 10.1109/TED.2011.2154332ISI: 000293708500059Scopus ID: 2-s2.0-79960843602OAI: oai:DiVA.org:kth-29780DiVA, id: diva2:397749
Merknad
Updated from submitted to published.Tilgjengelig fra: 2011-02-15 Laget: 2011-02-15 Sist oppdatert: 2017-12-11bibliografisk kontrollert
Inngår i avhandling
1. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors
Åpne denne publikasjonen i ny fane eller vindu >>Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors
2011 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. However, to compete with other switching devices such as Field Effect Transistors (FETs) or IGBTs, it is necessary for a power SiC BJT to provide a high current gain to reduce the power required from the drive circuit. In this thesis implantation free 4H-SiC BJTs with linearly graded base layer have been demonstrated with common-emitter current gain of 50 and open-base breakdown voltage of 2700 V. Also an efficient junction termination extension (JTE) with 80% of theoretical parallel-plane breakdown voltage was analyzed by fabrication of high voltage PiN diodes to achieve an optimum dose of remaining JTE charge. Surface passivation of 4H-SiC BJT is an essential factor for efficient power BJTs. Therefore different passivation techniques were compared and showed that around 60% higher maximum current gain can be achieved by a newsurface passivation layer with low interface trap density that consists of PECVD oxide followed by post-deposition oxide anneal in N2O ambient. This surface passivation along with doublezone JTE were used for fabrication of high power BJTs that result in successful demonstration of 2800 V breakdown voltage for small area (0.3 × 0.3 mm) and large area (1.8 × 1.8 mm) BJTs with a maximum dc current gain of 55 and 52, respectively. The small area BJT showed RON = 4mΩcm2, while for the large are BJT RON = 6.8 mΩcm2. Finally, a Darlington transistor with a maximum current gain of 2900 at room temperature and 640 at 200 °C is reported. The high current gain of the Darlington transistor is achieved by optimum design for the ratio of the active area of the driver BJT to the output BJT.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2011. s. xv, 79
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:01
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-29726 (URN)978-91-7415-861-8 (ISBN)
Disputas
2011-03-04, Sal C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:00 (engelsk)
Opponent
Veileder
Merknad
QC 20110216Tilgjengelig fra: 2011-02-16 Laget: 2011-02-14 Sist oppdatert: 2011-02-16bibliografisk kontrollert

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