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Dopant incorporation in thin strained Si layers implanted with Sb
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
Vise andre og tillknytning
2010 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, nr 9, s. 2474-2477Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been Studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry. X-ray diffraction and 4-point probe measurements Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior Particularly, increasing the tensile strain in the Si layer from 0 to 0 8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from similar to 7 to 30% Furthermore, 0 8% strain in antimony doped Si gives similar to 20% reduction in the sheet resistance in comparison to the unstrained sample.

sted, utgiver, år, opplag, sider
2010. Vol. 518, nr 9, s. 2474-2477
Emneord [en]
Strained Si, Ion implantation, Sb incorporation
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-29929DOI: 10.1016/j.tsf.2009.09.160ISI: 000275615100042Scopus ID: 2-s2.0-76049116311OAI: oai:DiVA.org:kth-29929DiVA, id: diva2:398406
Merknad
QC 20110117 Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting, Strasbourg, FRANCE, JUN 08-12, 2009Tilgjengelig fra: 2011-02-17 Laget: 2011-02-17 Sist oppdatert: 2017-12-11bibliografisk kontrollert

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Hallén, Anders

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