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Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6459-749X
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6705-1660
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
2008 (engelsk)Inngår i: SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES   : MATERIALS, PROCESSING, AND DEVICES / [ed] Harame D; Caymax M; Koester S; Miyazaki S; Rim K; Tillack B; Boquet J; Cressier J; Masini G; Reznicek A; Takagi S, 2008, Vol. 16, nr 10, s. 529-537Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

It was found that for strained Si channel layers of supercritical thickness oil relaxed SiGe virtual substrates, the 1/f noise oil,average is maintained at the same level as in unstrained devices. Short gate length nMOSFETs were analyzed statistically and the noise level variation, across a large number of samples, was similar in strained and unstrained devices. The obtained noise level variation was partly related to gate length fluctuations across the wafer, which was evident from a small V-T fluctuation.

sted, utgiver, år, opplag, sider
2008. Vol. 16, nr 10, s. 529-537
Serie
ECS Transactions, ISSN 1938-5862 ; vol. 16 nr 10
Emneord [en]
Gate lengths, High mobilities, MOSFETs, N-mosfets, Noise levels, Noise properties, Number of samples, Relaxed sige, Strained Si channels, Super-critical, Virtual substrates, Germanium, MOSFET devices, Semiconducting germanium compounds, Silicon alloys, Silicon wafers
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-30345DOI: 10.1149/1.2986809ISI: 000273336700060Scopus ID: 2-s2.0-63149147870ISBN: 978-1-56677-656-1 (tryckt)OAI: oai:DiVA.org:kth-30345DiVA, id: diva2:401749
Konferanse
3rd International SiGe, Ge, and Related Compounds Symposium, Honolulu, HI, OCT 12-17, 2008
Merknad
QC 20110303Tilgjengelig fra: 2011-03-03 Laget: 2011-02-24 Sist oppdatert: 2011-03-03bibliografisk kontrollert

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