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Effect of collision cascade density on radiation damage in SiC
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
2009 (engelsk)Inngår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 267, nr 8-9, s. 1247-1250Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The damage accumulation in 6H-SiC bombarded at room temperature with 1.3 keV/amu atomic P+ ions and small cluster ions PFn+ (n = 2 and 4) have been studied by Rutherford backscattering spectrometry in channeling mode. Results show that collision cascade density strongly affects damage buildup in SiC. The cluster ion bombardment of SiC produces more stable defects both near the surface and in the region between the surface and bulk defect peaks than irradiation by atomic ions.

sted, utgiver, år, opplag, sider
2009. Vol. 267, nr 8-9, s. 1247-1250
Emneord [en]
Ion implantation, Cluster ions, Defects, Collision cascades, SiC
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Identifikatorer
URN: urn:nbn:se:kth:diva-30842DOI: 10.1016/j.nimb.2009.01.025ISI: 000266519900010Scopus ID: 2-s2.0-65249109371OAI: oai:DiVA.org:kth-30842DiVA, id: diva2:402527
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QC 20110308Tilgjengelig fra: 2011-03-08 Laget: 2011-03-04 Sist oppdatert: 2017-12-11bibliografisk kontrollert

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