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Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.ORCID-id: 0000-0002-0977-2598
2011 (engelsk)Inngår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 314, nr 1, s. 119-122Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Zn3As2 epitaxial layers were grown on GaAs (1 0 0) substrates by liquid phase epitaxy (LPE) using Ga as the solvent. Zinc mole fraction in the growth melt was varied from 1.07 x 10(-2) to 6 x 10(-2). X-ray diffraction spectrum exhibits a sharp peak at 43.3 degrees characteristic of Zn3As2 crystalline layer. The peak intensity increases with increase in zinc mole fraction in the growth melt. The compositions of the as-grown Zn3As2 layers were confirmed by energy dispersive X-ray (EDX) analysis. Surface morphology was studied using scanning electron microscopy (SEM) and the thickness of the epilayers was also determined. The Hall measurements at 300 K indicate that Zn3As2 epilayers are unintentionally p-doped. With an increase of zinc mole fraction in the growth melt, carrier concentration increases and carrier mobility decreases. Infrared optical absorption spectroscopy showed a sharp absorption edge at 1.0 eV corresponding to the reported band gap of Zn3As2. (C) 2010 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2011. Vol. 314, nr 1, s. 119-122
Emneord [en]
X-ray diffraction, Liquid phase epitaxy, Zinc compounds, Semiconducting materials
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-31004DOI: 10.1016/j.jcrysgro.2010.11.126ISI: 000286853400024Scopus ID: 2-s2.0-78651103849OAI: oai:DiVA.org:kth-31004DiVA, id: diva2:404402
Merknad
QC 20110317Tilgjengelig fra: 2011-03-17 Laget: 2011-03-07 Sist oppdatert: 2017-12-11bibliografisk kontrollert

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