This work presents the selective epitaxial growth (SEG) of Si1-xGex (x=0.15-0.315) layers with high amount of boron (1 x 10(20)-1 x 10(21) cm(-3)) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been Studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.