Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
Visa övriga samt affilieringar
2011 (Engelska)Ingår i: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 60, nr 1, s. 100-104Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Uncooled microbolometer thermal infrared detector technology is presently revolutionizing the infrared technology field. Essential improvement of the cost/performance ratio would be achieved by microbolometer arrays with higher sensitivity, since this allows the use of simpler and less costly camera optics, which implies a lower cost of the complete IR camera. The sensitivity of the microbolometers depends critically on the signal-to-noise ratio of the integrated thermistor material, which is set by its temperature coefficient of resistance (TCR) and noise characteristics. In this work we have investigated the use of epitaxial silicon-germanium/silicon (SiGe/Si) quantum well (QW) structures as a thermistor material. Si0.68Ge0.32/Si QW structures typically give a TCR of 3.0%/K and low noise values. A calculation of the noise equivalent temperature NETD of a bolometer gives 25 mK using the following assumptions: f-number = 1, 30 Hz video frame rate for a 640 x 480 array, with a pixel size 25 x 25 mu m. Higher TCR values are foreseen for SiGe/Si quantum dot structures, and the noise is expected to be similar to the QW based structures.

Ort, förlag, år, upplaga, sidor
2011. Vol. 60, nr 1, s. 100-104
Nyckelord [en]
TCR; Noise; NETD; Bolometer; Thermistor; Quantum wells; Semiconductor; Infrared
Nationell ämneskategori
Fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-35108DOI: 10.1016/j.sse.2011.01.034ISI: 000291116100020Scopus ID: 2-s2.0-79955521990OAI: oai:DiVA.org:kth-35108DiVA, id: diva2:425015
Anmärkning
QC 20110620Tillgänglig från: 2011-06-20 Skapad: 2011-06-20 Senast uppdaterad: 2017-12-11Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltextScopus

Sök vidare i DiVA

Av författaren/redaktören
Radamson, H. H.Kolahdouz, Mohammad
Av organisationen
Integrerade komponenter och kretsar
I samma tidskrift
Solid-State Electronics
Fysik

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetricpoäng

doi
urn-nbn
Totalt: 395 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf