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Impact of dry-etching induced damage in InP-based photonic crystals
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.ORCID-id: 0000-0002-4606-4865
Vise andre og tillknytning
2008 (engelsk)Inngår i: PHOTONIC CRYSTAL MATERIALS AND DEVICES VIII, 2008, Vol. 6989, s. U9890-U9890Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

In this work variations of the carrier lifetime in a GaInAsP/InP quantum well in two-dimensional PhC structures etched by Ar/Cl-2 chemically assisted ion beam etching as a function of the processing parameters is investigated. It is shown that the deposition conditions of the SiO2 mask material and its coverage as well as other process steps such as annealing affect the carrier lifetimes. However the impact of patterning the semiconductor on the carrier lifetime is dominant, showing over an order of magnitude reduction. For given PhC lattice parameters, the sidewall damage is shown to be directly related to the measured carrier lifetimes. A simple qualitative model based on sputtering theory and assuming a conical hole-shape development during etching is used to explain the experimental results.

sted, utgiver, år, opplag, sider
2008. Vol. 6989, s. U9890-U9890
Serie
Proceedings of SPIE, ISSN 0277-786X ; 6989
Emneord [en]
dry-etching, damage, InP, silicon dioxide, quantum well photoluminescence, chemically assisted ion beam etching, sputtering, photonic crystal
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-36698DOI: 10.1117/12.781231ISI: 000257885400021Scopus ID: 2-s2.0-45149085492OAI: oai:DiVA.org:kth-36698DiVA, id: diva2:431013
Merknad
QC 20110714Tilgjengelig fra: 2011-07-14 Laget: 2011-07-13 Sist oppdatert: 2013-11-19bibliografisk kontrollert

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