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Novel routes in heteroepitaxy and selective area growth for nanophotonics
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.ORCID-id: 0000-0002-0977-2598
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.
2008 (engelsk)Inngår i: Quantum Sensing and Nanophotonic Devices V / [ed] Sudharsanan, R; Jelen, C, 2008, Vol. 6900, s. H9000-H9000Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Integration of active photonic components on silicon and silicon on insulator (SOI) would be versatile for nanophotonics since CMOS compatible processes are available for fabricating passive devices on Si/SOI. Selective area growth of III-V semiconductors is also attractive for realising periodic structures for nanophotonics. Here we report on the recent results of high quality InP on Si and InP on SOI achieved by means of nanopatterning. MQW structures have been realised on InP/Si and InP/SOI. We would elaborate routes for monolithic integration of active and passive devices for nanophotonics.

sted, utgiver, år, opplag, sider
2008. Vol. 6900, s. H9000-H9000
Serie
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6900
Emneord [en]
heteroepitaxy, nanophotonics, silicon photonics, InP on Si, InP on SOI
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-38401DOI: 10.1117/12.767339ISI: 000254740500011Scopus ID: 2-s2.0-43249099517ISBN: 978-0-8194-7075-1 (tryckt)OAI: oai:DiVA.org:kth-38401DiVA, id: diva2:437839
Konferanse
Conference on Quantum Sensing and Nanophotonic Devices IV Location: San Jose, CA Date: JAN 20-23, 2008
Tilgjengelig fra: 2011-08-30 Laget: 2011-08-25 Sist oppdatert: 2011-08-30bibliografisk kontrollert

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