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GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 mu m intersubband absorption
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
Vise andre og tillknytning
2007 (engelsk)Inngår i: Quantum Sensing and Nanophotonic Devices IV / [ed] Razeghi, M; Brown, GJ, 2007, Vol. 6479, s. 64791E-1-64791E-12Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-mu m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.

sted, utgiver, år, opplag, sider
2007. Vol. 6479, s. 64791E-1-64791E-12
Serie
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6479
Emneord [en]
GaN, AlN, multiple quantum well, MBE, intersubband, template
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-39120DOI: 10.1117/12.695457ISI: 000246393600024Scopus ID: 2-s2.0-34248634306ISBN: 978-0-8194-6592-4 (tryckt)OAI: oai:DiVA.org:kth-39120DiVA, id: diva2:439885
Konferanse
Quantum Sensing and Nanophotonic Devices IV; San Jose, CA; 22 January 2007 through 25 January 2007
Merknad

QC 20110909

Tilgjengelig fra: 2011-09-09 Laget: 2011-09-08 Sist oppdatert: 2016-05-09bibliografisk kontrollert

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