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Intersubband photonic devices by group-III nitrides
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
Vise andre og tillknytning
2007 (engelsk)Inngår i: Optoelectronic Materials And Devices II / [ed] Nakano, Y, 2007, Vol. 6782, s. N7821-N7821Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

The characteristics of intersubband transitions in III-nitride quantum wells are promising for detectors and all-optical switches through a high intrinsic speed (similar to 1 THz), and can also provide a high optical saturation power and a desired small negative chirp parameter in electroabsorption modulators. The high LO-phonon energy allows to improve the operating temperature of THz emitters. Recent achievements and prospects for intersubband III-nitride photonic devices, mainly for lambda=1.55 mu m, are briefly reviewed. Further, means to enhance material quality by achieving crack-free growth of GaN/AlN multiple-quantum-well (MQW) structures, and by employing intersubband transitions in multiple-quantum-disk (MQD) structures incorporated into dislocation free GaN nanocolumns are discussed. We investigate the occurrence of cracks in MBE-grown GaN/AlN MQWs on GaN MOVPE templates with respect to the buffer layer, the number of QWs and the temperature reduction rate after growth. Intersubband absorption in GaN/AlN MQDs in the wavelength range 1.38-1.72 mu m is demonstrated in three samples grown on Si(111).

sted, utgiver, år, opplag, sider
2007. Vol. 6782, s. N7821-N7821
Serie
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6782
Emneord [en]
intersubband transition, electroabsorption modulator, quantum well infrared photodetector (QWIP), alloptical switch, quantum cascade laser, GaN, AlN, GaN template, nanocolumn, molecular beam epitaxy
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-39116DOI: 10.1117/12.754372ISI: 000253358300051Scopus ID: 2-s2.0-42549136075ISBN: 978-0-8194-6945-8 (tryckt)OAI: oai:DiVA.org:kth-39116DiVA, id: diva2:439956
Konferanse
Optoelectronic Materials and Devices II; Wuhan; 2 November 2007 through 5 November 2007
Tilgjengelig fra: 2011-09-09 Laget: 2011-09-08 Sist oppdatert: 2011-09-09bibliografisk kontrollert

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