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Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.ORCID-id: 0000-0002-0292-224X
2005 (engelsk)Inngår i: SILICON CARBIDE AND RELATED MATERIALS 2004 / [ed] Nipoti, R; Poggi, A; Scorzoni, A, ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005, Vol. 483, s. 365-368Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (E-c) have been detected.

sted, utgiver, år, opplag, sider
ZURICH-UETIKON: TRANS TECH PUBLICATIONS LTD , 2005. Vol. 483, s. 365-368
Serie
MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 483
Emneord [en]
DLTS, electron irradiation
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-42675ISI: 000228549600085Scopus ID: 2-s2.0-33750300863ISBN: 0-87849-963-6 (tryckt)OAI: oai:DiVA.org:kth-42675DiVA, id: diva2:447537
Konferanse
5th European Conference on Silicon Carbide and Related Materials. Bologna, ITALY. AUG 31-SEP 04, 2004
Merknad
QC 20111012Tilgjengelig fra: 2011-10-12 Laget: 2011-10-11 Sist oppdatert: 2011-10-12bibliografisk kontrollert

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Totalt: 228 treff
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