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InP-based two dimensional photonic crystals: A material and processing perspective
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
2008 (engelsk)Inngår i: ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2 / [ed] Marciniak, M, NEW YORK: IEEE , 2008, s. 25-25Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall Surface potential will be demonstrated.

sted, utgiver, år, opplag, sider
NEW YORK: IEEE , 2008. s. 25-25
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Identifikatorer
URN: urn:nbn:se:kth:diva-38662DOI: 10.1109/ICTON.2008.4598579ISI: 000259480300008ISBN: 978-1-4244-2625-6 (tryckt)OAI: oai:DiVA.org:kth-38662DiVA, id: diva2:448105
Konferanse
10th International Conference on Transparent Optical Networks, Athens, GREECE, JUN 22-26, 2008
Merknad
QC 20111014Tilgjengelig fra: 2011-10-14 Laget: 2011-08-31 Sist oppdatert: 2012-01-27bibliografisk kontrollert

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