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The effect of hard nitridation on Al(2)O(3) using a radio frequency operated plasma cell
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
Vise andre og tillknytning
2011 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, nr 22, s. 7796-7802Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report on an atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) investigation of hard nitridation of sapphire (alpha.-Al(2)O(3)) substrate, using an Epi UNI-Bulb RF plasma cell at substrate temperatures ranging from 250 to 600 degrees C. Our results show that an AlN(1-x)O(x) layer forms on sapphire after extended nitridation at all temperatures, following a Stranski-Krastanov growth mode, with less islands forming at higher temperatures. We also observe a layer-dependent charging shift in XPS, separating smooth AlN(1-x)O(x) layers from rough AlN(1-x)O(x) islands due to their different electronic coupling to the substrate. Although the island growth is suppressed at higher temperatures, the surface roughness increases at higher temperatures as seen by AFM. We also observe sputtering effects with protrusions and pits.

sted, utgiver, år, opplag, sider
2011. Vol. 519, nr 22, s. 7796-7802
Emneord [en]
Nitridation, Sapphire, Al(2)O(3), Radio-frequency plasma, X-ray photoelectron spectroscopy, Atomic force microscopy
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Identifikatorer
URN: urn:nbn:se:kth:diva-46861DOI: 10.1016/j.tsf.2011.04.227ISI: 000295057000030Scopus ID: 2-s2.0-80052122617OAI: oai:DiVA.org:kth-46861DiVA, id: diva2:454337
Forskningsfinansiär
Swedish Research Council
Merknad
QC 20111107Tilgjengelig fra: 2011-11-07 Laget: 2011-11-07 Sist oppdatert: 2017-12-08bibliografisk kontrollert

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