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Effects of process parameters on the photosensitivity properties of Ge doped silica films deposited with plasma CVD
Dainese, Matteo
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
(Laboratory of Optics, Photonics and Quantum Electronics)
Swillo, Marcin
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
(Laboratory of Optics, Photonics and Quantum Electronics)
ORCID iD:
0000-0003-2136-4914
Wosinski, Lech
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
(Laboratory of Optics, Photonics and Quantum Electronics)
ORCID iD:
0000-0001-5967-2651
2005 (English)
In:
Proceedings of the 13th International Congress on Thin Films, 2005
Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2005.
Keywords [en]
silica-on-silicon, Ge-doping, thin films, photosensitivity
National Category
Engineering and Technology
Research subject
SRA - ICT
Identifiers
URN:
urn:nbn:se:kth:diva-61633
OAI: oai:DiVA.org:kth-61633
DiVA, id:
diva2:479455
Conference
13th International Congress on Thin Films. Stockholm, Sweden. June 2005
Note
QC 20120125
Available from:
2012-01-17
Created:
2012-01-17
Last updated:
2012-01-25
Bibliographically approved
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Swillo, Marcin
Wosinski, Lech
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Dainese, Matteo
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modern-language-association-8th-edition
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harvard1
ieee
modern-language-association-8th-edition
vancouver
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