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Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2001 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2001, Vol. 640, p. H2.3.1-H2.3.6Conference paper, Published paper (Refereed)
Abstract [en]

Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.

Place, publisher, year, edition, pages
Boston, MA, 2001. Vol. 640, p. H2.3.1-H2.3.6
Series
Silicon Carbide- Materials, Processing and Devices
Keywords [en]
Chemical reactors, Chemical vapor deposition, Electric variables measurement, Epitaxial growth, Interfaces (materials), Scanning electron microscopy, Secondary ion mass spectrometry, Semiconductor doping, Semiconductor growth, Silicon carbide, Capacitance-voltage measurement, Trimethylaluminum, MESFET devices
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63032Scopus ID: 2-s2.0-0034877072OAI: oai:DiVA.org:kth-63032DiVA, id: diva2:481548
Conference
Silicon Carbide- Materials, Processing and Devices; Boston, MA; United States; 27 November 2000 through 29 November 2000
Note

QC 20190515

Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2019-05-15Bibliographically approved

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