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Silicon hybrid plasmonic submicron-donut resonator with pure dielectric access waveguides
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, Skolan för elektro- och systemteknik (EES), Elektroteknisk teori och konstruktion. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.ORCID-id: 0000-0002-3401-1125
KTH, Skolan för informations- och kommunikationsteknik (ICT), Fotonik och optik, Fotonik. KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.ORCID-id: 0000-0001-5967-2651
Vise andre og tillknytning
2011 (engelsk)Inngår i: Optics Express, E-ISSN 1094-4087, Vol. 19, nr 24, s. 23671-23682Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Characteristic analyses are given for a bent silicon hybrid plasmonic waveguide, which has the ability of submicron bending (e.g., R = 500nm) even when operating at the infrared wavelength range (1.2 mu m similar to 2 mu m). A silicon hybrid plasmonic submicron-donut resonator is then presented by utilizing the sharp-bending ability of the hybrid plasmonic waveguide. In order to enable long-distance optical interconnects, a pure dielectric access waveguide is introduced for the present hybrid plasmonic submicron-donut resonator by utilizing the evanescent coupling between this pure dielectric waveguide and the submicron hybrid plasmonic resonator. Since the hybrid plasmonic waveguide has a relatively low intrinsic loss, the theoretical intrinsic Q-value is up to 2000 even when the bending radius is reduced to 800nm. By using a three-dimensional finite-difference time-domain (FDTD) method, the spectral response of hybrid plasmonic submicron-donut resonators with a bending radius of 800nm is simulated. The critical coupling of the resonance at around 1423nm is achieved by choosing a 80nm-wide gap between the access waveguide and the resonator. The corresponding loaded Q-value of the submicron-donut resonator is about 220.

sted, utgiver, år, opplag, sider
2011. Vol. 19, nr 24, s. 23671-23682
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Identifikatorer
URN: urn:nbn:se:kth:diva-63272DOI: 10.1364/OE.19.023671ISI: 000298322000006PubMedID: 22109393Scopus ID: 2-s2.0-82055170361OAI: oai:DiVA.org:kth-63272DiVA, id: diva2:483390
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QC 20120125Tilgjengelig fra: 2012-01-25 Laget: 2012-01-23 Sist oppdatert: 2024-03-15bibliografisk kontrollert

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Shi, YaochengHe, SailingWosinski, LechThylen, Lars

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