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Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6459-749X
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-8108-2631
2012 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 59, nr 4, s. 1076-1083Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Operation up to 300 degrees C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input OR-NOR gate operated on - 15 V supply voltage from 27 degrees C up to 300 degrees C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.

sted, utgiver, år, opplag, sider
Institute of Electrical and Electronics Engineers (IEEE), 2012. Vol. 59, nr 4, s. 1076-1083
Emneord [en]
Bipolar junction transistor (BJT), emitter coupled logic (ECL), high-temperature integrated circuits (ICs), OR-NOR gate, silicon carbide (SiC)
HSV kategori
Forskningsprogram
Informations- och kommunikationsteknik
Identifikatorer
URN: urn:nbn:se:kth:diva-72233DOI: 10.1109/TED.2011.2182514ISI: 000302083800028Scopus ID: 2-s2.0-84859210119OAI: oai:DiVA.org:kth-72233DiVA, id: diva2:487321
Prosjekter
SSF HOTSiC
Forskningsfinansiär
StandUpSwedish Foundation for Strategic Research , RE10-0011
Merknad

QC 20150624

Tilgjengelig fra: 2012-01-31 Laget: 2012-01-31 Sist oppdatert: 2017-12-08bibliografisk kontrollert
Inngår i avhandling
1. Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
Åpne denne publikasjonen i ny fane eller vindu >>Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
2012 (engelsk)Licentiatavhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In particular, SiC bipolar junction transistors (BJTs) are suitable for high temperature integrated circuits (ICs), due to the absence of a gate oxide.

This work focuses on design, fabrication and characterization of the first 4H-SiC integrated circuits realized at KTH. It deals with basic bipolar ICs suitable for high temperature and low voltage applications. Operation up to 300 °C of low-voltage 4H-SiC NPN bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) has been demonstrated. In the temperature range 27 - 300 °C stable noise margins of about 1 V have been achieved for a 2-input OR-NOR gate operated on -15 V supply voltage, and an oscillation frequency of about 2 MHz has been observed for a 3-stage ring oscillator.

The possibility of realizing PNP transistors and passive devices in the same process technology has also been investigated.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2012. s. xiv, 57
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2012:04
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-63804 (URN)978-91-7501-244-5 (ISBN)
Presentation
2012-02-15, Sal/Hall C1, KTH Electrum, Isafjordsgatan 26, Kista, 10:15 (engelsk)
Opponent
Veileder
Merknad
QC 20120131Tilgjengelig fra: 2012-01-31 Laget: 2012-01-24 Sist oppdatert: 2012-01-31bibliografisk kontrollert
2. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
Åpne denne publikasjonen i ny fane eller vindu >>Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
2014 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. In addition, the possibility of placing integrated circuits in engine hot-sections can significantly reduce the weight and improve the reliability of automobiles and aircrafts, eliminating extra wires and cooling systems.

In order to develop such electronics semiconductors with superior high temperature characteristics compared to Si are required. Thanks to its wide bandgap,  almost three times that of Si, Silicon carbide (SiC) has been suggested for this purpose. Its low intrinsic carrier concentration, orders of magnitude lower than that of Si, makes SiC devices capable of operating at much higher temperatures than Si devices.

In this thesis solutions for 600° C SiC bipolar ICs have been investigated in depth at device physics, circuit and process integration level. Successful operation of devices and circuits  has been proven from -40 up to 600° C.

The developed technology features NPN and lateral PNP transistors, two levels of interconnects and one extra metal level acting as over-layer metallization for device contacts. The improved SiC etching and passivation procedures have provided NPN transistors with high current gain of approximately 200. Furthermore, non-monotonous current gain temperature dependences have been observed for NPN and PNP transistors. The current gain of NPN transistors increases with temperature at high enough temperatures above 300° C  depending on the base doping concentration. The current gain of lateral PNP transistors has, instead, shown a maximum of approximately 37 around 0° C.

Finally, high-temperature operation of 2-input ECL-based OR-NOR gates and  3- and 11-stage ring oscillators has been demonstrated. For the OR-NOR gates stable noise margins of approximately 1 or 1.5 V, depending on the gate design, have been observed up to 600° C with a delay-power consumption product of approximately 100 nJ in the range -40 to 500° C.  Ring oscillators with different designs, including more than 100 devices, have been  successfully tested in the range 27 to 300° C. Non-monotonous and almost constant temperature dependences have been observed for the oscillation frequency of 3- and 11-stage ring oscillator, respectively. In addition, room temperature propagation delays of a single inverter stage have been estimated to be approximately 100 and 40 ns for 3- and 11-stage ring oscillators, respectively. 

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2014. s. viii, 120
Serie
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:07
Emneord
silicon carbide (SiC), bipolar junction transistor (BJT), current gain, surface passivation, SiC etching, complementary bipolar, lateral PNP, Darlington transistors, SPICE modeling, high-temperature, integrated circuits, emitter coupled logic (ECL)
HSV kategori
Identifikatorer
urn:nbn:se:kth:diva-145401 (URN)978-91-7595-135-5 (ISBN)
Disputas
2014-06-10, Sal D, Forum, Isafjordgatan 39, Kista, 10:00 (engelsk)
Opponent
Veileder
Merknad

QC 20140522

Tilgjengelig fra: 2014-05-22 Laget: 2014-05-19 Sist oppdatert: 2014-05-22bibliografisk kontrollert

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