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Gd silicate: A high-k dielectric compatible with high temperature annealing
AMO GmbH, AMICA, Aachen, Germany.ORCID iD: 0000-0003-4552-2411
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2009 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 27, no 1, p. 249-252Article in journal (Refereed) Published
Abstract [en]

The authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd(2)O(3)) and silicon oxide (SiO(2)) on silicon substrates are compared after annealing at temperatures up to 1000 degrees C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the SiO(2) layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high-k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes.

Place, publisher, year, edition, pages
2009. Vol. 27, no 1, p. 249-252
Keywords [en]
Annealing; Capacitance; Charge coupled devices; Dielectric materials; Electric conductivity; Gadolinium; Gate dielectrics; Metal analysis; Metallic compounds; MOS devices; Ozone water treatment; Semiconducting silicon; Semiconducting silicon compounds; Semiconductor materials; Silica; Silicates; Silicon compounds; X ray diffraction analysis
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50543DOI: 10.1116/1.3025904ISI: 000265839000048Scopus ID: 2-s2.0-59949100650OAI: oai:DiVA.org:kth-50543DiVA, id: diva2:495351
Note
QC 20120209Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2022-10-24Bibliographically approved

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Lemme, Max C.
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