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Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonics
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Halvledarmaterial, HMA (Stängd 20120101).
Vise andre og tillknytning
2011 (engelsk)Inngår i: Conference Proceedings: International Conference on Indium Phosphide and Related Materials, VDE VERLAG GMBH , 2011, s. 1-4Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

The effect of chemical mechanical polishing (CMP) on epitaxial lateral overgrowth (ELOG) of InP is investigated. To this end, silicon wafers with a seed layer of InP has been treated in two ways; by depositing SiO2 mask and polishing it prior to performing ELOG, and by growing additional InP directly on the InP/Si wafer and then polishing the InP layer prior to depositing and patterning SiO2 followed by subsequent ELOG. For InP seed, a two step process with Chemlox™ slurry and sodium hypochlorite mixed with citric acid-based slurry has been used whereas for SiO2 surface polishing, only one slurry was employed. Analysis of the ELOG layers has been carried out with atomic force microscope (AFM) and panchromatic cathodoluminescence (PC-CL) in-situ a scanning electron microscope (SEM). The results show that polishing the InP/Si layer has not only a beneficial effect on surface morphology of the ELOG layer but also on reduction of its defect density as a consequence of improved conditions for near-ideal coalescence.

sted, utgiver, år, opplag, sider
VDE VERLAG GMBH , 2011. s. 1-4
Serie
International Conference on Indium Phosphide and Related Materials. Proceedings, ISSN 1092-8669
Emneord [en]
Epitaxial growth, Indium phosphide, Scanning electron microscopy, Silicon, Slurries, Surface morphology
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-79668Scopus ID: 2-s2.0-84863288246ISBN: 978-3-8007-3356-9 (tryckt)ISBN: 978-1-4577-1753-6 (tryckt)OAI: oai:DiVA.org:kth-79668DiVA, id: diva2:496118
Konferanse
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011; Berlin, Germany, 22-26 May, 2011
Merknad

QC 20120214

Tilgjengelig fra: 2012-02-09 Laget: 2012-02-09 Sist oppdatert: 2017-03-29bibliografisk kontrollert

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Lourdudoss, Sebastian

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Junesand, CarlHu, ChenWang, ZhechaoMetaferia, WondwosenLourdudoss, Sebastian
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