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Microstructured photonic crystal for single-mode long wavelength VCSELs
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2008 (Engelska)Ingår i: Semiconductor Lasers and Laser Dynamics III, 2008, Vol. 6997Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

In this article, we report on long wavelength (1.27 ÎŒm) single-mode micro-structured photonic crystal strained InGaAs quantum wells VCSELs for optical interconnection applications. Single fundamental mode room-temperature continuous-wave lasing operation was demonstrated for devices designed and processed with different two-dimensional etched patterns. The conventional epitaxial structure was grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) and contains fully doped GaAs/AlGaAs DBRs, one oxidation layer and three strained InGaAs quantum wells. The holes were etched half-way through the top-mirror following various designs (triangular and square lattices) and with varying hole's diameters and pitches. We obtained up to 1.7 mW optical output power and more than 30 dB Side-Mode Suppression Ratio (SMSR) at room temperature and in continuous wave operation. Systematic static electrical, optical and spectral characterization was performed on wafer using an automated probe station. Numerical modeling using the MIT Photonic-Bands (MPB [1]) package of the transverse modal behaviors in the photonic crystal was performed using the plane wave method in order to understand the index-guiding effects of the chosen patterns, and to further optimize the design structures for mode selection at the given wavelength.

Ort, förlag, år, upplaga, sidor
2008. Vol. 6997
Serie
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X ; 6997
Nyckelord [en]
Long-wavelength, Photonic crystals, Singlemode, Strained InGaAs quantum well, VCSEL, Crystal atomic structure, Crystal growth, Dynamics, Electric conductivity, Epitaxial growth, Heterojunctions, Lasers, Metallorganic vapor phase epitaxy, Metals, Molecular beam epitaxy, Optical interconnects, Powders, Quantum well lasers, Semiconducting indium, Semiconductor materials, Semiconductor quantum wells, Semiconductor quantum wires, Spectrum analyzers, Structural metals, Surface emitting lasers, Two dimensional, Wells, Applications., Continuous-wave lasing, Continuous-wave operation, Design structures, Epitaxial structures, Etched patterns, Fundamental modes, GaAs/AlGaAs, Index-guiding, Laser dynamics, Long wavelengths, Metal-organic vapor phase epitaxy, Mode selections, Numerical modelling, On-wafer, Optical interconnection, Optical output power, Optical-, Oxidation layers, Photonic, Plane wave method, Probe stations, Quantum wells, Room temperatures, Side-mode-suppression-ratio, Single modes, Spectral characterization, Square lattices, Semiconductor lasers
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Identifikatorer
URN: urn:nbn:se:kth:diva-82994DOI: 10.1117/12.783317ISI: 000258325400024Scopus ID: 2-s2.0-50249177623OAI: oai:DiVA.org:kth-82994DiVA, id: diva2:503129
Konferens
Semiconductor Lasers and Laser Dynamics III. Strasbourg. 7 April 2008 - 9 April 2008
Anmärkning

QC 20120228

Tillgänglig från: 2012-02-15 Skapad: 2012-02-12 Senast uppdaterad: 2017-03-30Bibliografiskt granskad

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Hammar, Mattias

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Berggren, JesperHammar, Mattias
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Mikroelektronik och tillämpad fysik, MAP
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