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Dielectric function spectra and critical-point energies of Cu2ZnSnSe4 from 0.5 to 9.0 eV
KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap.
KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap, Tillämpad materialfysik.ORCID-id: 0000-0002-9050-5445
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2012 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, nr 3, s. 033506-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We present dielectric function epsilon=epsilon(1) + i epsilon(2) spectra and critical-point energies of Cu2ZnSnSe4 determined by spectroscopic ellipsometry from 0.5 to 9.0 eV. We reduce artifacts from surface overlayers to the maximum extent possible by performing chemical-mechanical polishing and wet-chemical etching of the surface of a Cu2ZnSnSe4 thin film. Ellipsometric data are analyzed by the multilayer model and the epsilon spectra are extracted. The data exhibit numerous spectral features associated with critical points, whose energies are obtained by fitting standard lineshapes to second energy derivatives of the data. The experimental results are in good agreement with the a spectra calculated within the GW quasi-particle approximation, and possible origins of the pronounced critical-point structures are identified.

sted, utgiver, år, opplag, sider
2012. Vol. 111, nr 3, s. 033506-
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Identifikatorer
URN: urn:nbn:se:kth:diva-93018DOI: 10.1063/1.3681814ISI: 000301029800022Scopus ID: 2-s2.0-84863116574OAI: oai:DiVA.org:kth-93018DiVA, id: diva2:514851
Forskningsfinansiär
Swedish Research Council
Merknad

QC 20120411

Tilgjengelig fra: 2012-04-11 Laget: 2012-04-10 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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