Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
RF Power Amplifier IC with Low Memory Effect, Reduced Low Frequency Gain Peak and Isolated Temperature Tracking Circuitry
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektroniksystem.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Elektroniksystem.
2008 (Engelska)Ingår i: 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008, IEEE , 2008, s. 60-63Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

A highly linear wideband power amplifier IC with low memory effect for W-CDMA applications is presented utilizing Si LDMOS process technology. The IC was optimized to reduce typical low frequency gain peak often observed in LDMOS power devices. Topology of the interstage matching contributes to reduction of the electrical memory effect to specification level of maximum 2 dB imbalance over power between upper and lower Adjacent Channel Power Ratio when using II-tone wideband modulated signal. The on-chip temperature compensation circuitry tracks the active device temperature characteristic without degradation of the linearity or worsens the memory effect. The measured gain of the IC was 28.5 dB and 3-dB bandwidth of 600 MHz around 2100 MHz was achieved. The IC attained -50 dBc ACPR at 5 W output power. At power level of 45 W and IMD3 = -30dBc (two-tone) the IC exhibited power densities in excess of 469 mW/mm, in which matching losses were included. The IC demonstrated state-of-the-art RF power performance in terms of good linearity, low memory effects, well-suppressed low frequency gain peak and temperature tracking without linearity and IMD balance degradation.

Ort, förlag, år, upplaga, sidor
IEEE , 2008. s. 60-63
Serie
IEEE Compound Semiconductor Integrated Circuit Symposium. Technical Digest, ISSN 1550-8781
Nyckelord [en]
Degradation, Gallium alloys, Linearization, MOS devices, Power amplifiers, Semiconducting gallium
Nationell ämneskategori
Annan elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-93106DOI: 10.1109/CSICS.2008.20ISI: 000264860100016Scopus ID: 2-s2.0-57849143458ISBN: 978-1-4244-1939-5 (tryckt)OAI: oai:DiVA.org:kth-93106DiVA, id: diva2:515018
Konferens
2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008; Monterey, CA; 12 October 2008 through 15 October 2008
Anmärkning

QC 20120919

Tillgänglig från: 2012-04-11 Skapad: 2012-04-11 Senast uppdaterad: 2012-09-19Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltextScopus

Sök vidare i DiVA

Av författaren/redaktören
Bagger, RezaOlsson, Håkan
Av organisationen
Elektroniksystem
Annan elektroteknik och elektronik

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetricpoäng

doi
isbn
urn-nbn
Totalt: 132 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf