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Low-Loss High-Performance Base-Drive Unit for SiC BJTs
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0001-7922-3407
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0002-1755-1365
2012 (engelsk)Inngår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 27, nr 5, s. 2633-2643Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Driving a silicon carbide bipolar junction transistor is not a trivial issue, if low drive power consumption and short-switching times are desired. A dual-source base-drive unit with a speed-up capacitor consisting of a low-and a high-voltage source is, therefore, proposed in this paper. As a significant base current is required during the conduction state, the driver power consumption is higher than for other semiconductor switches. In the presented solution, the steady-state base current is provided by a low-voltage source and is optimized for lowpower losses. On the contrary, a second source with a higher voltage and speed-up capacitor is used in order to improve the switching performance of the device. The proposed driver has experimentally been compared to other standard driver solutions by using a double-pulse circuit and a 2-kW dc/dc boost converter. Switching times of 20 ns at turn-ON and 35 ns at turn-OFF were recorded. Finally, the efficiency of the converter was determined experimentally at various switching frequencies. From power loss measurements at 100-kHz switching frequency using the proposed driver in a 2-kW dc/dc boost converter, it was found that the efficiency was approximately 99.0%. In the same operating point, the driver power consumption was only 0.08% of the rated power.

sted, utgiver, år, opplag, sider
2012. Vol. 27, nr 5, s. 2633-2643
Emneord [en]
Base-driver circuit, base power consumption, dc-dc power converters, Silicon carbide (SiC) BJT
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-93372DOI: 10.1109/TPEL.2011.2171722ISI: 000301195600039Scopus ID: 2-s2.0-84858051217OAI: oai:DiVA.org:kth-93372DiVA, id: diva2:515832
Merknad
QC 20120416Tilgjengelig fra: 2012-04-16 Laget: 2012-04-16 Sist oppdatert: 2017-12-07bibliografisk kontrollert
Inngår i avhandling
1. High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
Åpne denne publikasjonen i ny fane eller vindu >>High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
2015 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. From a system point of view the SiC power device could decrease the cost and complexity of cooling, reduce the size and weight of the system, and enable the system to endure harsher environments.

The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented.

The theory behind the state-of-the-art dual-source (2SRC) base driver that was presented by Rabkowski et al. a few years ago is described. This concept of proportional base drivers is introduced with a focus on the discretized proportional base drivers (DPBD). By implementing the DPBD concept and building a prototype it is shown that the steady-state consumption of the base driver can be reduced considerably.

 The aspects of the reverse conduction of the SiC BJT are presented. It is shown to be of importance to consider the reduced voltage drop over the base-emitter junction.

Last the impact of SiC unipolar and bipolar devices in series-resonant (SLR) converters is presented. Two full-bridges are designed and constructed, one with SiC MOSFETs utilizing the body diode for reverse conduction during the dead-time, and the second with SiC BJTs with anti-parallel SiC Schottky diodes. It is found that the SiC power devices, with their absence of tail current, are ideal devices to fully utilize the soft-switching properties that the SLR converters offer. The SiC MOSFET benefits from its possibility to utilize reverse conduction with a low voltage drop. It is also found that the size of capacitance of the snubbers can be reduced compare to state-of-the-art silicon technology. High switching frequencies of 200 kHz are possible while still keeping the losses low. A dead-time control strategy for each device is presented. The dual control (DuC) algorithm is tested with the SiC devices and compared to frequency modulation (FM).

The analytical investigations presented in this thesis are confirmed by experimental results on several laboratory prototype converters.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2015. s. xiv, 71
Serie
TRITA-EE, ISSN 1653-5146 ; 2015:024
Emneord
Silicon Carbide, Bipolar Junction Transistor (BJT), Resonant converter, Series-resonant converter (SLR), Base drive circuits, High- Efficiency Converters, High-Frequency Converters
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-168163 (URN)978-91-7595-601-5 (ISBN)
Disputas
2015-06-12, H1, Teknikringen 33, KTH, Stockholm, 09:45 (engelsk)
Opponent
Veileder
Merknad

QC 20150529

Tilgjengelig fra: 2015-05-29 Laget: 2015-05-27 Sist oppdatert: 2015-05-29bibliografisk kontrollert

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