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Fluorescent SiC as a new material for white LEDs
Vise andre og tillknytning
2012 (engelsk)Inngår i: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T148, s. 014002-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Current III-V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.

sted, utgiver, år, opplag, sider
2012. Vol. T148, s. 014002-
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Identifikatorer
URN: urn:nbn:se:kth:diva-93935DOI: 10.1088/0031-8949/2012/T148/014002ISI: 000302216000003Scopus ID: 2-s2.0-84862068177OAI: oai:DiVA.org:kth-93935DiVA, id: diva2:524829
Forskningsfinansiär
Swedish Research Council, 2009-5307
Merknad
QC 20120504Tilgjengelig fra: 2012-05-04 Laget: 2012-05-03 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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Linnarsson, Margareta K.

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