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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
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2012 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 343, no 1, p. 133-137Article in journal (Refereed) Published
Abstract [en]

Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.

Place, publisher, year, edition, pages
2012. Vol. 343, no 1, p. 133-137
Keywords [en]
Surface structure, Atomic force microscopy, Helium ion microscopy, Physical vapor deposition processes, Titanium compound
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-94058DOI: 10.1016/j.jcrysgro.2012.01.020ISI: 000302422300023Scopus ID: 2-s2.0-84862818345OAI: oai:DiVA.org:kth-94058DiVA, id: diva2:525637
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QC 20120508

Available from: 2012-05-08 Created: 2012-05-07 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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