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Anodic Nb2O5 Nonvolatile RRAM
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. (Condensed Matter Physics)
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och Informationsteknik, IMIT. (Condensed Matter Physics)
2012 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 59, nr 4, s. 1144-1148Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric Nb2O5 films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer. After the electroforming process, Au/Nb2O5/Nb/Si sandwich memory cells demonstrate reproducible direct current and pulse mode switching between two resistance states with a resistance ON-OFF ratio around 10(3). Low and high resististive states show ohmic conductivity and field-assisted Poole-Frenkel-type conductivity, respectively. Nonvolatile resistance storage was traced within 40 days to quantify retention characteristics of the Nb2O5 memristor. The low-temperature anodic oxidation of Nb was found to be feasible to fabricate high-density cross-point memory with 3-D stack structures.

sted, utgiver, år, opplag, sider
2012. Vol. 59, nr 4, s. 1144-1148
Emneord [en]
Conduction mechanism, dielectric film, impedance spectroscopy, memristor, niobium pentoxide, retention characteristics, unipolar resistance switching
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-95112DOI: 10.1109/TED.2011.2182515ISI: 000302083800037Scopus ID: 2-s2.0-84859211968OAI: oai:DiVA.org:kth-95112DiVA, id: diva2:526860
Merknad
QC 20120515Tilgjengelig fra: 2012-05-15 Laget: 2012-05-14 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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