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Heteroepitaxy and selective area heteroepitaxy for silicon photonics
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Halvledarmaterial, HMA.ORCID-id: 0000-0002-0977-2598
2012 (engelsk)Inngår i: Current opinion in solid state & materials science, ISSN 1359-0286, E-ISSN 1879-0348, Vol. 16, nr 2, s. 91-99Artikkel, forskningsoversikt (Fagfellevurdert) Published
Abstract [en]

This article reviews the major achievements in recent years on heteroepitaxy and selective area heteroepitaxy that are relevant to silicon photonics. Material aspects are given due importance without trying to cover all kinds of devices. Under heteroepitaxy several systems based on GaAs, InP and GaSb and their related materials and dilute III-nitrides all on Si substrates are covered and assessed. Quantum dot and quantum well lasers are taken as device examples. The potential of the emerging SnGeSi/Si system is highlighted. Under selective area heteroepitaxy, growth of InP from SiO2 trenches in Si and epitaxial lateral overgrowth of InP on silicon are exemplified as the potential routes for monolithic integration on silicon. The expected trends and anticipated advances are indicated.

sted, utgiver, år, opplag, sider
2012. Vol. 16, nr 2, s. 91-99
Emneord [en]
Heteroepitaxy, Selective area growth, Selective area heteroepitaxy, III-V on Si, SiGeSn on Si, Epitaxial lateral overgrowth, Silicon photonics, Monolithic integration
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Identifikatorer
URN: urn:nbn:se:kth:diva-96734DOI: 10.1016/j.cossms.2012.01.003ISI: 000303975500007Scopus ID: 2-s2.0-84860202099OAI: oai:DiVA.org:kth-96734DiVA, id: diva2:532940
Forskningsfinansiär
Swedish Research Council
Merknad
QC 20120612Tilgjengelig fra: 2012-06-12 Laget: 2012-06-11 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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