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Evaluation of junction termination for silicon X-ray detectors
Acreo AB, Kista, Sweden.
KTH, Skolan för teknikvetenskap (SCI), Tillämpad fysik, Biomedicinsk fysik och röntgenfysik.
Silex Microsyst AB, Järfälla, Sweden.
Sectra Imtec AB, Solna, Sweden.
Vise andre og tillknytning
2011 (engelsk)Inngår i: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 648, s. S68-S71Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Junction terminations intended for silicon strip X-ray detectors were evaluated experimentally and with simulations, with respect to their tolerance to radiation-induced surface charge. The terminations were designed with an inner guard ring biased to the same potential as the active anode and multiple p+-doped rings with metallic field plates at floating potential. Two designs, one with 9 and one with 14 floating rings were evaluated and applied to simple non-segmented test diodes. The test diodes were irradiated with X-rays to 72-74 kGy, the surface charge was determined from capaciatance-voltage measurements, and reverse breakdown voltage was determined from I-V-curves. Both simulations and experiments showed superior performance of the 14-ring design. The experimentally determined surface charge density after irradiation was in the order of +5 x 10(11) cm(-2), and the breakdown voltages were similar to 900 and 1600 V for the 9-ring and 14-ring termination, respectively.

sted, utgiver, år, opplag, sider
2011. Vol. 648, s. S68-S71
Emneord [en]
Junction termination, Floating ring, Field plate, Surface charge, X-ray detector
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-99118DOI: 10.1016/j.nima.2010.12.152ISI: 000305376900019Scopus ID: 2-s2.0-79960843858OAI: oai:DiVA.org:kth-99118DiVA, id: diva2:541279
Merknad

QC 20120716

Tilgjengelig fra: 2012-07-16 Laget: 2012-07-13 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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