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Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
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2012 (Engelska)Ingår i: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 20, nr 19, s. 21264-21271Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 mu m and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 mu m, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 mu m) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.

Ort, förlag, år, upplaga, sidor
2012. Vol. 20, nr 19, s. 21264-21271
Nyckelord [en]
Molecular-Beam Epitaxy, Infrared Photodetectors, Inas, Detectors, Growth
Nationell ämneskategori
Annan fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-103127DOI: 10.1364/OE.20.021264ISI: 000308865600068Scopus ID: 2-s2.0-84866264107OAI: oai:DiVA.org:kth-103127DiVA, id: diva2:559299
Forskningsfinansiär
Vinnova
Anmärkning

QC 20121008

Tillgänglig från: 2012-10-08 Skapad: 2012-10-04 Senast uppdaterad: 2020-01-29Bibliografiskt granskad
Ingår i avhandling
1. Type-II interband quantum dot photodetectors
Öppna denna publikation i ny flik eller fönster >>Type-II interband quantum dot photodetectors
2013 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

Photon detectors based on single-crystalline materials are of great interest for high performance imaging applications due to their low noise and fast response. The major detector materials for sensing in the long-wavelength infrared (LWIR) band (8-14 µm) are currently HgCdTe (MCT) and AlGaAs/GaAs quantum wells (QW) used in intraband-based quantum-well infrared photodetectors (QWIPs). These either suffer from compositional variations that are detrimental to the system performance as in the case of MCT, or, have an efficient dark current generation mechanism that limits the operating temperature as for QWIPs. The need for increased on-wafer uniformity and elevated operating temperatures has resulted in the development of various alternative approaches, such as type-II strained-layer superlattice detectors (SLSs) and intraband quantum-dot infrared photodetectors (QDIPs).

In this work, we mainly explore two self-assembled quantum-dot (QD) materials for use as the absorber material in photon detectors for the LWIR, with the aim to develop low-dark current devices that can allow for high operating temperatures and high manufacturability. The detection mechanism is here based on type-II interband transitions from bound hole states in the QDs to continuum states in the matrix material.

Metal-organic vapor-phase epitaxy (MOVPE) was used to fabricate (Al)GaAs(Sb)/InAs and In(Ga)Sb/InAs QD structures for the development of an LWIR active material. A successive analysis of (Al)GaAs(Sb) QDs using absorption spectroscopy shows strong absorption in the range 6-12 µm interpreted to originate in intra-valence band transitions. Moreover, record-long photoluminescence (PL) wavelength up to 12 µm is demonstrated in InSb- and InGaSb QDs.

Mesa-etched single-pixel photodiodes were fabricated in which photoresponse is demonstrated up to 8 µm at 230 K with 10 In0.5Ga0.5Sb QD layers as the active region. The photoresponse is observed to be strongly temperature-dependent which is explained by hole trapping in the QDs. In the current design, the photoresponse is thermally limited at typical LWIR sensor operating temperatures (60-120 K), which is detrimental to the imaging performance. This can potentially be resolved by selecting a matrix material with a smaller barrier for thermionic emission of photo-excited holes. If such an arrangement can be achieved, type-II interband InGaSb QD structures can turn out to be interesting as a high-operating-temperature sensor material for thermal imaging applications.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH Royal Institute of Technology, 2013. s. 81
Serie
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2013:03
Nyckelord
photodetector, quantum dot, infrared, MOVPE, thermal imaging, type-II, photoluminescence, III/V, InSb, InGaSb, InAs
Nationell ämneskategori
Nanoteknik
Forskningsämne
SRA - Informations- och kommunikationsteknik
Identifikatorer
urn:nbn:se:kth:diva-122294 (URN)978-91-7501-779-2 (ISBN)
Disputation
2013-06-14, Room D, Isafjordsgatan 39, Kista, 10:00 (Engelska)
Opponent
Handledare
Anmärkning

QC 20130521

Tillgänglig från: 2013-05-21 Skapad: 2013-05-17 Senast uppdaterad: 2019-04-29Bibliografiskt granskad

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Soldemo, MarkusWeissenrieder, JonasHammar, Mattias

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Gustafsson, OscarBerggren, JesperReuterskiöld-Hedlund, CarlErnerheim-Jokumsen, ChristopherSoldemo, MarkusWeissenrieder, JonasEkenberg, UlfGöthelid, MatsHammar, Mattias
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Integrerade komponenter och kretsarKTHMaterialfysik, MFFotonik och optik
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