Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0002-1755-1365
2013 (Engelska)Ingår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 28, nr 3, s. 1488-1501Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The very low on-state resistance, the voltage-controlled gate, and the relative simplicity of fabrication of the normally ON silicon carbide junction field-effect transistor (JFET) make this device the most important player among all state-of-the-art silicon carbide transistors. However, the normally ON nature counts as the main factor which keeps this device far from being considered as an alternative to the silicon insulated-gate bipolar transistor. A self-powered gate driver without external power supply for normally ON silicon carbide JFETs is presented in this paper. The proposed circuit is able to handle the short-circuit currents when the devices are subjected to the dc-link voltage by utilizing the energy associated with this current. On the other hand, it supplies the necessary negative gate-source voltage during the steady-state operation. A detailed description of the operating states in conjunction with a theoretical analysis of the proposed self-powered gate driver is presented. The first part of the experimental investigation has been performed when the proposed circuit is connected to a device which is directly subjected to the dc-link voltage. The second set of measurements were recorded when the self-powered gate-driver was employed as the driver of normally ON components in a half-bridge converter. From the experimental results, it is shown that the short-circuit current is cleared within approximately 20μs after the dc-link voltage is applied, while the power consumption when all devices are kept in the OFF state equals 0.37W. Moreover, it is experimentally shown that the proposed gate driver can properly switch when it is employed in a half-bridge converter. Finally, limitations regarding the range of the applications where the self-powered gate drive can efficiently operate are also discussed.

Ort, förlag, år, upplaga, sidor
IEEE , 2013. Vol. 28, nr 3, s. 1488-1501
Nyckelord [en]
Gate-driver power supply, normally ON silicon carbide (SiC) junction field-effect transistors (JFETs), protection circuit, silicon carbide, Counts-as, DC-link voltages, Experimental investigations, External power supplies, Gate drivers, Gate drives, Gate-source voltage, Half-bridge converters, Junction field-effect transistors, Normally on, On-state resistance, Operating state, Power supply, Protection circuits, Self-powered, Steady-state operation, Voltage-controlled, Field effect transistors, Insulated gate bipolar transistors (IGBT)
Nationell ämneskategori
Elektroteknik och elektronik
Forskningsämne
SRA - Energi
Identifikatorer
URN: urn:nbn:se:kth:diva-118143DOI: 10.1109/TPEL.2012.2209185ISI: 000314697000039Scopus ID: 2-s2.0-84867799218OAI: oai:DiVA.org:kth-118143DiVA, id: diva2:605043
Forskningsfinansiär
StandUp
Anmärkning

QC 20130213

Tillgänglig från: 2013-02-13 Skapad: 2013-02-12 Senast uppdaterad: 2017-12-06Bibliografiskt granskad
Ingår i avhandling
1. On Gate Drivers and Applications of Normally-ON SiC JFETs
Öppna denna publikation i ny flik eller fönster >>On Gate Drivers and Applications of Normally-ON SiC JFETs
2013 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts.From a system perspective, these three advantages of silicon carbide can determinethe three possible design directions: high efficiency, high switchingfrequency, and high temperature.The structure designs of the commercially-available SiC power transistorsalong with a variety of macroscopic characteristics are presented. Apart fromthe common design and performance problems, each of these devices suffersfrom different issues and challenges which must be dealt with in order to pavethe way for mass production. Moreover, the expected characteristics of thefuture silicon carbide devices are briefly discussed. The presented investigationreveals that, from the system point-of-view, the normally-ON JFET isone of the most challenging silicon carbide devices. There are basically twoJFET designs which were proposed during the last years and they are bothconsidered.The state-of-the-art gate driver for normally-ON SiC JFETs, which wasproposed a few years ago is briefly described. Using this gate driver, theswitching performance of both Junction Field-Effect Transistor designs wasexperimentally investigated.Considering the current development state of the available normally-ONSiC JFETs, the only way to reach higher current rating is to parallel-connecteither single-chip discrete devices or to build multichip modules. Four deviceparameters as well as the stray inductances of the circuit layout might affectthe feasibility of parallel connection. The static and dynamic performance ofvarious combinations of parallel-connected normally-ON JFETs were experimentallyinvestigated using two different gate-driver configurations.A self-powered gate driver for normally-ON SiC JFETs, which is basicallya circuit solution to the “normally-ON problem” is also shown. This gatedriver is both able to turn OFF the shoot-through current during the startupprocess, while it also supplies the steady-state power to the gate-drivecircuit. From experiments, it has been shown that in a half-bridge converterconsisting of normally-ON SiC JFETs, the shoot-through current is turnedOFF within approximately 20 μs.Last but not least, the potential benefits of employing normally-ON SiCJFETs in future power electronics applications is also presented. In particular,it has been shown that using normally-ON JFETs efficiencies equal 99.8% and99.6% might be achieved for a 350 MW modular multilevel converter and a40 kVA three-phase two-level voltage source converter, respectively.Conclusions and suggestions for future work are given in the last chapterof this thesis.

Abstract [sv]

I denna avhandling behandlas olika aspekter av normally–ON junction–field–effect–transistorer (JFETar) baserade på kiselkarbid (SiC). Effekthalvledarkomponenteri SiC kan arbeta vid högre switchfrekvens, högre verkningsgradoch högre temperatur än motsvarigheterna i kisel. Ur ett systemperspektivkan de tre nämnda fördelarna användas i omvandlarkonstruktionen för attuppnå antingen hög verkningsgrad, hög switchfrekvens eller hög temperaturtålighet.Såväl halvledarstrukturen som de makroskopiska egenskaperna för kommersiellttillgängliga SiC–transistorer presenteras. Bortsett från de vanligakonstruktions–och prestandaproblemen lider de olika komponenterna av ettantal tillkortakommanden som måste övervinnas för att bana väg för massproduktion.Även framtida SiC–komponenter diskuteras.Ur ett systemperspektiv är normally-ON JFETen en av de mest utmanandeSiC-komponenterna. De två varianter av denna komponent som varittillgängliga de senaste åren har båda avhandlats.State–of–the–art–drivdonet för normally-ON JFETar som presenteradesför några år sedan beskrivs i korthet. Med detta drivdon undersöks switchegenskapernaför båda JFET-typerna experimentellt.Vid beaktande av det aktuella utvecklingsstadiet av de tillgängliga normally–ON JFETarna i SiC, är det möjligt att uppnå höga märkströmmar endastom ett antal single–chip–komponenter parallellkopplas eller om multichipmodulerbyggs. Fyra komponentparametrar samt strö-induktanser för kretsenkan förutses påverka parallellkopplingen. De statiska och dynamiska egenskapernaför olika kombinationer av parallellkopplade normally-ON JFETarundersöks experimentellt med två olika gate–drivdonskonfigurationer.Ett självdrivande gate-drivdon för normally-ON JFETar presenteras också.Drivdonet är en kretslösning till “normally–ON–problemet”. Detta gatedrivdonkan både stänga av kortslutningsströmmen vid uppstart och tillhandahållaströmförsörjning vid normal drift. Med hjälp av en halvbrygga medkiselkarbidbaserade normally–ON JFETar har det visats att kortslutningsströmmenkan stängas av inom cirka 20 μs.Sist, men inte minst, presenteras de potentiella fördelarna med användningenav SiC-baserade normally-ON JFETar i framtida effektelektroniskatillämpningar. Speciellt visas att verkningsgrader av 99.8% respektive 99.5%kan uppnås i fallet av en 350 MW modular multilevel converter och i en40 kVA tvånivåväxelriktare. Sista kaplitet beskriver slutsatser och föreslagetframtida arbete.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH Royal Institute of Technology, 2013. s. x, 102
Serie
Trita-EE, ISSN 1653-5146 ; 2013:28
Nyckelord
Silicon Carbide, Normally-ON Junction Field-Effect Transistors (JFETs), Gate-Drive Circuits, Protection circuits, High-Efficiency Converters.
Nationell ämneskategori
Annan elektroteknik och elektronik
Forskningsämne
Järnvägsgruppen - Elsystem
Identifikatorer
urn:nbn:se:kth:diva-122679 (URN)978-91-7501-799-0 (ISBN)
Disputation
2013-06-14, Kollegiesalen, Brinellvägen 8, KTH, Stockholm, 13:00 (Engelska)
Opponent
Handledare
Anmärkning

QC 20130527

Tillgänglig från: 2013-05-27 Skapad: 2013-05-26 Senast uppdaterad: 2013-05-27Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltextScopus

Personposter BETA

Nee, Hans-Peter

Sök vidare i DiVA

Av författaren/redaktören
Peftitsis, DimosthenisRabkowski, JacekNee, Hans-Peter
Av organisationen
Elektrisk energiomvandling
I samma tidskrift
IEEE transactions on power electronics
Elektroteknik och elektronik

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetricpoäng

doi
urn-nbn
Totalt: 5911 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf