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Spin-polarized (001) surface states of the topological crystalline insulator Pb0.73Sn0.27Se
KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik (Stängd 20120101), Materialfysik, MF (Stängd 20120101).ORCID-id: 0000-0002-8216-5321
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2013 (Engelska)Ingår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 87, nr 11, s. 115106-Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We study the nature of (001) surface states in Pb0.73Sn0.27Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states with nonzero spin polarization when the system is a normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements provide conclusive evidence for the formation of these (001) surface states in Pb0.73Sn0.27Se, as well as for their chiral spin structure.

Ort, förlag, år, upplaga, sidor
2013. Vol. 87, nr 11, s. 115106-
Nyckelord [en]
Pb1-Xsnxse, Inversion, Snte, Alloys, Phase, Bands
Nationell ämneskategori
Fysik
Identifikatorer
URN: urn:nbn:se:kth:diva-120162DOI: 10.1103/PhysRevB.87.115106ISI: 000315731400002Scopus ID: 2-s2.0-84874844135OAI: oai:DiVA.org:kth-120162DiVA, id: diva2:613783
Forskningsfinansiär
Knut och Alice Wallenbergs StiftelseVetenskapsrådetEU, Europeiska forskningsrådet
Anmärkning

QC 20150623

Tillgänglig från: 2013-04-02 Skapad: 2013-04-02 Senast uppdaterad: 2017-12-06Bibliografiskt granskad
Ingår i avhandling
1. Consequences of a non-trivial band-structure topology in solids: Investigations of topological surface and interface states
Öppna denna publikation i ny flik eller fönster >>Consequences of a non-trivial band-structure topology in solids: Investigations of topological surface and interface states
2013 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The development and characterization of experimental setups for angle-resolved photoelectron spectroscopy (ARPES) and spin- and angle-resolved photoelectron spectroscopy (SARPES) is described. Subsequently, the two techniques are applied to studies of the electronic band structure in topologically non-trivial materials.

The laser-based ARPES setup works at a photon energy of 10.5 eV and a typical repetition rate in the range 200 kHz to 800 kHz. By using a time-of-flight electron energy analyzer electrons emitted from the sample within a solid angle of up to ±15 degrees can be collected and analyzed simultaneously. The SARPES setup is equipped with a traditional hemispherical electron energy analyzer in combination with a mini-Mott electron polarimeter. The system enables software-controlled switching between angle-resolved spin-integrated and spin-resolved measurements, thus providing the possibility to orient the sample by mapping out the electronic band structure using ARPES before performing spin-resolved measurements at selected points in the Brillouin zone.

Thin films of the topological insulators (TIs) Bi2Se3, Bi2Te3 and Sb2Te3 are grown using e-beam evaporation and their surface states are observed by means of ARPES. By using a combination of low photon energies and cryogenic sample temperatures the topological states originating from both the vacuum interface (surface) and the substrate interface are observed in Bi2Se3 films and Bi2Se3/Bi2Te3 heterostructures, with total thicknesses in the ultra-thin limit (six to eight quintuple layers), grown on Bi-terminated Si(111) substrates. Band alignment between Si and Bi2Se3 at the interface creates a band bending through the films. The band bending is found to be independent of the Fermi level (EF) position in the bulk of the substrate, suggesting that the surface pinning of EF in the Si(111) substrate remains unaltered after deposition of the TI films. Therefore, the type and level of doping of the substrate does not show any large influence on the size of the band bending.

Further, we provide experimental evidence for the realization of a topological crystalline insulator (TCI) phase in the narrow-band semiconductor Pb1−xSnxSe. The TCI phase exists for temperatures below the transition temperature Tc and is characterized by an inverted bulk band gap accompanied by the existence of non-gapped surface states crossing the band gap. Above Tc the material is in a topologically trivial phase where the surface states are gapped. Thus, when lowering the sample temperature across Tc a topological phase transition from a trivial insulator to a TCI is observed. SARPES studies indicate a helical spin structure of the surface states both in the topologically trivial and the TCI phase.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH Royal Institute of Technology, 2013. s. x, 82
Serie
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2013:02
Nyckelord
spin- and angle-resolved photoelectron spectroscopy, time-of-flight analyzer, laser based light source, topological insulator, topological crystalline insulator, thin films, surface state, interface state, Bi2Se3, Pb1-xSnxSe
Nationell ämneskategori
Fysik Den kondenserade materiens fysik
Identifikatorer
urn:nbn:se:kth:diva-121974 (URN)978-91-7501-735-8 (ISBN)
Disputation
2013-05-31, Sal D, KTH-Forum, Isafjordsgatan 39, Kista, 10:00 (Engelska)
Opponent
Handledare
Forskningsfinansiär
VetenskapsrådetKnut och Alice Wallenbergs Stiftelse
Anmärkning

QC 20130507

Tillgänglig från: 2013-05-07 Skapad: 2013-05-06 Senast uppdaterad: 2013-05-07Bibliografiskt granskad

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Fulltext saknas i DiVA

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Förlagets fulltextScopusarXiv:1212.1783

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Wojek, Bastian M.Hårdensson Berntsen, MagnusTjernberg, Oscar

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Wojek, Bastian M.Hårdensson Berntsen, MagnusTjernberg, Oscar
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Materialfysik, MF (Stängd 20120101)
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Physical Review B. Condensed Matter and Materials Physics
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