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A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Materialfysik, MF.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Materialfysik, MF.
Vise andre og tillknytning
2013 (engelsk)Inngår i: Advanced Functional Materials, ISSN 1616-301X, E-ISSN 1616-3028, Vol. 23, nr 15, s. 1919-1922Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field-independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first-order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field-dependent population of up and down domains in the free layer.

sted, utgiver, år, opplag, sider
2013. Vol. 23, nr 15, s. 1919-1922
Emneord [en]
multilevel memory, giant magnetoresistance, magnetic domains, spintronic memristor, graded anisotropy
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-122325DOI: 10.1002/adfm.201202319ISI: 000317690800008Scopus ID: 2-s2.0-84876255957OAI: oai:DiVA.org:kth-122325DiVA, id: diva2:622504
Forskningsfinansiär
Swedish Foundation for Strategic Research Swedish Research CouncilKnut and Alice Wallenberg Foundation
Merknad

QC 20130522

Tilgjengelig fra: 2013-05-22 Laget: 2013-05-20 Sist oppdatert: 2017-12-06bibliografisk kontrollert

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