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Towards optical hyperdoping of binary oxide semiconductors
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Halvledarmaterial, HMA.
Vise andre og tillknytning
2013 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, nr 14, s. 143512-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Surface structuring with ultrashort laser pulses is of high interest as a scalable doping technique as well as for surface nanostructuring applications. By depositing a layer of antimony before the irradiation of ZnO, we were able to incorporate a large quantity of Sb atoms into the single crystalline region of the laser modified surface for potential p-type doping. We have studied the incorporation of antimony and the material properties of laser-induced periodic surface structures (LIPSS) on c-plane ZnO upon femtosecond laser processing at two different peak fluences. We observe high spatial frequency LIPSS with structure periods from 200-370 nm and low spatial frequency LIPSS with periods of 600-700 nm. At a fluence of 0.8 J/cm(2), close the ablation threshold of ZnO, the LIPSS are single crystalline except for a few nanometers of amorphous material. At a peak laser fluence of 3.1 J/cm(2), they consist of polycrystalline and single crystalline ZnO areas. However, the polycrystalline part dominates with a thickness of about 500 nm.

sted, utgiver, år, opplag, sider
2013. Vol. 113, nr 14, s. 143512-
Emneord [en]
Femtosecond-Laser-Pulses, Microstructured Silicon, Infrared-Absorption, Zno, Irradiation, Surface
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-123631DOI: 10.1063/1.4801531ISI: 000318250600029Scopus ID: 2-s2.0-84876382849OAI: oai:DiVA.org:kth-123631DiVA, id: diva2:629420
Merknad

QC 20130617

Tilgjengelig fra: 2013-06-17 Laget: 2013-06-13 Sist oppdatert: 2017-12-06bibliografisk kontrollert

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Totalt: 178 treff
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