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Hydrogen on III-V (110) surfaces: Charge accumulation and STM signatures
KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Materialfysik, MF.
Vise andre og tillknytning
2013 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 88, nr 4, s. 045319-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The behavior of hydrogen on the 110 surfaces of III-V semiconductors is examined using ab initio density functional theory. It is confirmed that adsorbed hydrogen should lead to a charge accumulation layer in the case of InAs, but shown here that it should not do so for other related III-V semiconductors. It is shown that the hydrogen levels due to surface adsorbed hydrogen behave in a material dependent manner related to the ionicity of the material, and hence do not line up in the universal manner reported by others for hydrogen in the bulk of semiconductors and insulators. This fact, combined with the unusually deep Gamma point conduction band well of InAs, accounts for the occurrence of an accumulation layer on InAs(110) but not elsewhere. Furthermore, it is shown that adsorbed hydrogen should be extremely hard to distinguish from native defects (particularly vacancies) using scanning tunneling and atomic force microscopy, on both InAs(110) and other III-V (110) surfaces.

sted, utgiver, år, opplag, sider
2013. Vol. 88, nr 4, s. 045319-
Emneord [en]
Scanning-Tunneling-Microscopy, Semiconductor Surfaces, Gaas(110) Surfaces, Inp(110) Surfaces, Structural-Properties, Electronic-Structure, Si(111)-7x7 Surface, Gap(110) Surfaces, Vacancy Formation, Low-Temperatures
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-126882DOI: 10.1103/PhysRevB.88.045319ISI: 000322224800005Scopus ID: 2-s2.0-84883146100OAI: oai:DiVA.org:kth-126882DiVA, id: diva2:642829
Forskningsfinansiär
Swedish Research CouncilKnut and Alice Wallenberg Foundation
Merknad

QC 20130823

Tilgjengelig fra: 2013-08-23 Laget: 2013-08-22 Sist oppdatert: 2017-12-06bibliografisk kontrollert

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