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Dual-function gate driver for a power module with SiC junction field transistors
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0001-6184-6470
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0002-1755-1365
2013 (engelsk)Inngår i: 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013, IEEE , 2013, s. 245-250Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Driving a high-power module which is populated with several parallel-connected silicon carbide junction field-effect transistor chips must be done appropriately. Parasitic elements may give rise to oscillations during turn-on and turn-off. Fast and oscillation-free switching performance is desired in order to achieve a high efficiency. The key-issue in order to fulfill these two requirements is the design of a sophisticated gate driver. This paper proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current and voltage suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 140 ns and 165 ns respectively can be reached, while the magnitude of the current oscillations is kept at an acceptable level. Moreover, using the proposed gate driver an efficiency of approximately 99.6% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz.

sted, utgiver, år, opplag, sider
IEEE , 2013. s. 245-250
Emneord [en]
Gate Driver, Junction Field Effect Transistor, Power Module, Silicone Carbide
HSV kategori
Forskningsprogram
SRA - Energi
Identifikatorer
URN: urn:nbn:se:kth:diva-133369DOI: 10.1109/ECCE-Asia.2013.6579104ISI: 000332789100040Scopus ID: 2-s2.0-84883717322ISBN: 978-147990482-2 (tryckt)OAI: oai:DiVA.org:kth-133369DiVA, id: diva2:661951
Konferanse
2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013; Melbourne, VIC; Australia; 3 June 2013 through 6 June 2013
Forskningsfinansiär
StandUp
Merknad

QC 20131105

Tilgjengelig fra: 2013-11-05 Laget: 2013-10-31 Sist oppdatert: 2016-09-16bibliografisk kontrollert
Inngår i avhandling
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Åpne denne publikasjonen i ny fane eller vindu >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2016. s. 101
Serie
TRITA-EE, ISSN 1653-5146 ; 2016:145
Emneord
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Disputas
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (engelsk)
Opponent
Veileder
Merknad

QC 20160922

Tilgjengelig fra: 2016-09-22 Laget: 2016-09-16 Sist oppdatert: 2016-09-22bibliografisk kontrollert

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