Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-8760-1137
Visa övriga samt affilieringar
2014 (Engelska)Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, nr 1, s. 012005-Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

As-grown and pre-oxidized silicon carbide (SiC) samples of polytype 4H have been annealed at temperatures up to 1950 degrees C for 10 min duration using inductive heating, or at 2000 degrees C for 30 s using microwave heating. The samples consisted of a n-type high-purity epitaxial layer grown on 4 degrees off-axis < 0001 > n(+)-substrate and the evolution of the carbon vacancy (V-C) concentration in the epitaxial layer was monitored by deep level transient spectroscopy via the characteristic Z(1/2) peak. Z(1/2) appears at similar to 0.7 eV below the conduction band edge and arises from the doubly negative charge state of V-C. The concentration of V-C increases strongly after treatment at temperatures >= 1600 degrees C and it reaches almost 10(15)cm(-3) after the inductive heating at 1950 degrees C. A formation enthalpy of similar to 5.0 eV is deduced for V-C, in close agreement with recent theoretical predictions in the literature, and the entropy factor is found to be similar to 5 k (k denotes Boltzmann's constant). The latter value indicates substantial lattice relaxation around V-C, consistent with V-C being a negative-U system exhibiting considerable Jahn-Teller distortion. The microwave heated samples show evidence of non-equilibrium conditions due to the short duration used and display a lower content of V-C than the inductively heated ones. Finally, concentration-versus-depth profiles of V-C favour formation in the "bulk" of the epitaxial layer as the prevailing process and not a Schottky type process at the surface.

Ort, förlag, år, upplaga, sidor
2014. Vol. 115, nr 1, s. 012005-
Nyckelord [en]
4H silicon carbide, Boltzmann's constant, Conduction band edge, Formation enthalpy, High-temperature processing, Lattice relaxation, Nonequilibrium conditions, Silicon carbides (SiC)
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
URN: urn:nbn:se:kth:diva-141062DOI: 10.1063/1.4837996ISI: 000329456300005Scopus ID: 2-s2.0-84892154936OAI: oai:DiVA.org:kth-141062DiVA, id: diva2:695122
Anmärkning

QC 20140210

Tillgänglig från: 2014-02-10 Skapad: 2014-02-07 Senast uppdaterad: 2017-12-06Bibliografiskt granskad

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltextScopus

Personposter BETA

Hallén, Anders

Sök vidare i DiVA

Av författaren/redaktören
Hallén, Anders
Av organisationen
Integrerade komponenter och kretsar
I samma tidskrift
Journal of Applied Physics
Teknik och teknologier

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetricpoäng

doi
urn-nbn
Totalt: 211 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf