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Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0001-6184-6470
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling. Warsaw University of Technology, Poland .
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0003-0570-9599
Vise andre og tillknytning
2014 (engelsk)Inngår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, nr 5, s. 2367-2379Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Silicon Carbide high-power modules populated with several parallel-connected junction field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in order to achieve fast and oscillation-free switching performance, which are the main goals. These two requirements are related closely to the design of the gate-drive unit, and they must be kept under certain limits when high efficiencies are targeted. This paper deeply investigates several versions of gate-drive units and proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 130 and 185 ns respectively can be reached, while the magnitude of the current oscillations is kept at an adequate level. Moreover, using the proposed gate driver an efficiency of approximately 99.7% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz.

sted, utgiver, år, opplag, sider
IEEE , 2014. Vol. 29, nr 5, s. 2367-2379
Emneord [en]
Gate driver, junction field effect transistor, power module, silicone carbide
HSV kategori
Forskningsprogram
SRA - Energi
Identifikatorer
URN: urn:nbn:se:kth:diva-141276DOI: 10.1109/TPEL.2013.2277616ISI: 000329991500024Scopus ID: 2-s2.0-84893083630OAI: oai:DiVA.org:kth-141276DiVA, id: diva2:696122
Forskningsfinansiär
StandUp
Merknad

QC 20140213

Tilgjengelig fra: 2014-02-13 Laget: 2014-02-13 Sist oppdatert: 2017-12-06bibliografisk kontrollert
Inngår i avhandling
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Åpne denne publikasjonen i ny fane eller vindu >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

sted, utgiver, år, opplag, sider
Stockholm: KTH Royal Institute of Technology, 2016. s. 101
Serie
TRITA-EE, ISSN 1653-5146 ; 2016:145
Emneord
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Disputas
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (engelsk)
Opponent
Veileder
Merknad

QC 20160922

Tilgjengelig fra: 2016-09-22 Laget: 2016-09-16 Sist oppdatert: 2016-09-22bibliografisk kontrollert

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