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A Comprehensive Graphene FET Model for Circuit Design
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0003-1234-6060
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0003-4637-8001
Vise andre og tillknytning
2014 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 61, nr 4, s. 1199-1206Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

During the last years, graphene-based field-effect transistors (GFETs) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time, analytical models that predict the electrical characteristics of GFETs have evolved rapidly. These models, however, have a complexity level that can only be handled with the help of a circuit simulator. On the other hand, analog circuit designers require simple models that enable them to carry out fast hand calculations, i.e., to create circuits using small-signal hybrid-pi models, calculate figures of merit, estimate gains, pole-zero positions, and so on. This paper presents a comprehensive GFET model that is simple enough for being used in hand calculations during circuit design and at the same time, it is accurate enough to capture the electrical characteristics of the devices in the operating regions of interest. Closed analytical expressions are provided for the drain current I-D, small-signal transconductance gain g(m), output resistance r(o), and parasitic capacitances C-gs and C-gd. In addition, figures of merit, such as intrinsic voltage gain A(V), transconductance efficiency g(m)/I-D, and transit frequency f(T) are presented. The proposed model has been compared to a complete analytical model and also to measured data available in current literature. The results show that the proposed model follows closely to both the complete analytical model and the measured data; therefore, it can be successfully applied in the design of GFET analog circuits.

sted, utgiver, år, opplag, sider
2014. Vol. 61, nr 4, s. 1199-1206
Emneord [en]
Analytic model, field-effect transistor (FET), graphene
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-144530DOI: 10.1109/TED.2014.2302372ISI: 000333464000039Scopus ID: 2-s2.0-84897916636OAI: oai:DiVA.org:kth-144530DiVA, id: diva2:714508
Merknad

QC 20140428

Tilgjengelig fra: 2014-04-28 Laget: 2014-04-24 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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Vaziri, SamRusu, Ana

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Rodriguez, SaulVaziri, SamSmith, AndersonÖstling, MikaelLemme, Max C.Rusu, Ana
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