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Self-Powered Gate Driver for Normally-ON SiC JFETs: Design Considerations and System Limitations
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.
KTH, Skolan för elektro- och systemteknik (EES), Elektrisk energiomvandling.ORCID-id: 0000-0002-1755-1365
2014 (engelsk)Inngår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, nr 10, s. 5129-5135Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A circuit solution to the normally-ON property of the normally-ON silicon carbide junction field-effect transistor, namely the self-powered gate driver, has been recently proposed. This letter sheds some light on the design process of the self-powered gate driver concept as well as limitations from the system perspective. It is experimentally shown that the parameters of the self-powered gate driver must be chosen taking into account a tradeoff between a fast response and stable operation of the driver. Moreover, the influence of the shoot-through current in the fast activation of the self-powered gate driver is also presented.

sted, utgiver, år, opplag, sider
2014. Vol. 29, nr 10, s. 5129-5135
Emneord [en]
Gate drivers, normally-ON silicon carbide junction field-effect transistor, protection circuit
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URN: urn:nbn:se:kth:diva-149493DOI: 10.1109/TPEL.2014.2320360ISI: 000339618500010Scopus ID: 2-s2.0-84902203816OAI: oai:DiVA.org:kth-149493DiVA, id: diva2:740101
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QC 20140822

Tilgjengelig fra: 2014-08-22 Laget: 2014-08-22 Sist oppdatert: 2017-12-05bibliografisk kontrollert

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