Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
High dose Fe implantation of gan: Damage build-up and dopant redistribution
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.ORCID-id: 0000-0002-8760-1137
KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
Vise andre og tillknytning
2008 (engelsk)Inngår i: PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, Vol. 100, nr PART 4Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Undoped GaN epilayers implanted at room temperature with 50-325 keV Fe + ions in the fluence range of 1015 - 1017 ions/cm are studied by a combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis. Results show that for high ion fluences (>1 × 1016 cm-2) enhanced Fe concentration closer to the surface is observed. The Fe redistribution towards the surface increases as the ion fluence increases. Our findings are attributed to radiation enhanced diffusion during ion implantation and increasing of Fe diffusivity in the implantation-induced amorphous phase near the surface.

sted, utgiver, år, opplag, sider
2008. Vol. 100, nr PART 4
Serie
Journal of Physics Conference Series, ISSN 1742-6588 ; 100
Emneord [en]
Amorphous phase, Diffusivities, Dopant redistribution, Elastic recoil detection analysis, Fluence range, GaN epilayers, High dose, Ion fluences, Radiation enhanced diffusion, Room temperature, Rutherford backscattering/channeling, Time of flight, Gallium alloys, Gallium nitride, Ion implantation, Molecular beam epitaxy
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-154018DOI: 10.1088/1742-6596/100/4/042036ISI: 000275655200084Scopus ID: 2-s2.0-77954330322OAI: oai:DiVA.org:kth-154018DiVA, id: diva2:755073
Konferanse
17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology, Stockholm, SWEDEN, JUL 02-06, 2007
Merknad

QC 20141013

Tilgjengelig fra: 2014-10-13 Laget: 2014-10-10 Sist oppdatert: 2014-10-13bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Hallén, AndersLourdudoss, Sebastian

Søk i DiVA

Av forfatter/redaktør
Hallén, AndersAggerstam, ThomasLourdudoss, Sebastian
Av organisasjonen

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 212 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf