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Selective growth of B- and C-doped SiGe layers in unprocessed and recessed Si openings for pMOSFET application
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
Vise andre og tillknytning
2009 (engelsk)Inngår i: EUROCVD 17 / CVD 17, Electrochemical Society, 2009, nr 8 PART 1, s. 81-88Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.

sted, utgiver, år, opplag, sider
Electrochemical Society, 2009. nr 8 PART 1, s. 81-88
Serie
ECS Transactions, ISSN 1938-5862 ; 25
Emneord [en]
Boron-doping, C-doped, Concentration of, Ge content, Growth parameters, matrix, On chips, Pattern dependencies, pMOSFET, Selective epitaxial growth, Selective growth, SiGe layers, Strain reduction, Boron, Doping (additives), Germanium, Silicon alloys, Chemical vapor deposition
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Identifikatorer
URN: urn:nbn:se:kth:diva-152715DOI: 10.1149/1.3207578ISI: 000338305900009Scopus ID: 2-s2.0-76549108240ISBN: 978-156677745-2 (tryckt)OAI: oai:DiVA.org:kth-152715DiVA, id: diva2:755167
Konferanse
17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society, 4 October 2009 through 9 October 2009, Vienna, Austria
Merknad

QC 20141014

Tilgjengelig fra: 2014-10-14 Laget: 2014-10-01 Sist oppdatert: 2014-10-14bibliografisk kontrollert

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Kolahdouz, MohammadrezaAdibi, P. Tabib ZadehFarniya, Ali AfsharTrybom, ErikDi Benedetto, LuigiShayestehaminzadeh, SeyedmohammadRadamson, Henry H.
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