Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Static Nonlinearity in Graphene Field Effect Transistors
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0003-4637-8001
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0003-1234-6060
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
Vise andre og tillknytning
2014 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 61, nr 8, s. 3001-3003Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The static linearity performance metrics of the graphene-based field effect transistor (GFET) transconductor are studied and modeled. Closed expressions are proposed for second-and third-order harmonic distortion (HD2, HD3), second-and third-order intermodulation distortion (Delta IM2, Delta IM3), and second-and third-order intercept points (A(IIP2), A(IIP3)). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design to predict the GFET biasing conditions at which linearity requirements are met.

sted, utgiver, år, opplag, sider
2014. Vol. 61, nr 8, s. 3001-3003
Emneord [en]
Graphene-based field effect transistor (GFET), nonlinearity, RF circuit
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-155492DOI: 10.1109/TED.2014.2326887ISI: 000342906200057Scopus ID: 2-s2.0-84904966355OAI: oai:DiVA.org:kth-155492DiVA, id: diva2:762367
Merknad

QC 20141111

Tilgjengelig fra: 2014-11-11 Laget: 2014-11-06 Sist oppdatert: 2017-12-05bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Vaziri, Sam

Søk i DiVA

Av forfatter/redaktør
Rodriguez, SaulSmith, Anderson D.Vaziri, SamÖstling, MikaelLemme, Max C.
Av organisasjonen
I samme tidsskrift
IEEE Transactions on Electron Devices

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 50 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf