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Analysis of the birefringence of a silicon-on-insulator rib waveguide
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Centra, Zhejiang-KTH Joint Research Center of Photonics, JORCEP. KTH, Tidigare Institutioner                               , Teoretisk elektroteknik.ORCID-id: 0000-0002-3401-1125
2004 (Engelska)Ingår i: Applied Optics, ISSN 1559-128X, E-ISSN 2155-3165, Vol. 43, nr 5, s. 1156-1161Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

A detailed analysis of the polarization characteristics (birefringence) of a silicon-on-insulator (SOI) rib waveguide is given. The fundamental TE- and TM-polarized modes of the SOI rib waveguide are calculated by a semivectorial finite-difference method. The rib width and the slab height of the SOI rib waveguide are normalized with respect to the total height of the silicon layer. A general relation between the two normalized parameters for a nonbirefringent SOI rib waveguide is obtained. According to this relation a nonbirefringent SOI rib waveguide can easily be designed. The fabrication tolerance for a nonbirefringent SOI rib waveguide is also analyzed, revealing that the tolerance can be increased by use of a larger total height of the silicon layer.

Ort, förlag, år, upplaga, sidor
2004. Vol. 43, nr 5, s. 1156-1161
Nyckelord [en]
Rib waveguides, Single-mode fibres (SMF), Birefringence, CMOS integrated circuits, Finite difference method, Light polarization, Mathematical models, Optical fibers, Refractive index, Semiconducting films, Silicon on insulator technology
Nationell ämneskategori
Elektroteknik och elektronik
Identifikatorer
URN: urn:nbn:se:kth:diva-5158DOI: 10.1364/AO.43.001156ISI: 000188878900019Scopus ID: 2-s2.0-1442331576OAI: oai:DiVA.org:kth-5158DiVA, id: diva2:7960
Anmärkning
QC 20101004Tillgänglig från: 2005-05-27 Skapad: 2005-05-27 Senast uppdaterad: 2017-12-04Bibliografiskt granskad
Ingår i avhandling
1. Designs and simulations of silicon-based microphotonic devices
Öppna denna publikation i ny flik eller fönster >>Designs and simulations of silicon-based microphotonic devices
2005 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The characteristics of a silicon-on-insulator (SOI) rib waveguide, including the bending loss of a multimode bent waveguide and the birefringence of a rib waveguide, are analyzed by using a finite-difference method (FDM). Based on a detailed analysis for a multimode bent waveguide, an appropriately designed multimode bent waveguide for reducing effectively the bending loss of the fundamental mode is realized. The slab height and the rib width of an SOI rib waveguide are normalized with the total height of the silicon layer and a general relation between these two normalized parameters for a nonbirefringent SOI rib waveguide is established. Using this general relation, one can easily design a nonbirefringent SOI rib waveguide. The issue of multimode effect in the SOI-based microphotonic devices such as arrayed-waveguide gratings (AWGs), etched diffraction gratings (EDGs), and multimode interference (MMI) couplers is discussed in detail. Two kinds of taper structures are proposed for reducing the multimode effects in EDGs or MMI couplers. A bi-level taper is introduced to eliminate effectively the multimode effects in an EDG or an MMI coupler. The bi-level taper is very appropriate for an EDG demultiplexer since the Si layer is etched through simultaneously for both the grating and the bottom taper structure, and thus no additional fabrication process is required. For the simulation of an AWG demultiplexer, a fast simulation method based on the Gaussian approximation is proposed and two kinds of effective and accurate three-dimensional (3D) simulation modeling are developed. The first 3D model is based on Kirchhoff-Huygens diffraction formula. To improve the computational speed, the 3D model is reduced to a two-dimensional (2D) one by integrating the corresponding field distributions in the AWG demultiplexer along the vertical direction under an assumption that the power coupled to the higher order modes in the free propagation region (FPR) is negligibly small. The equivalent 2D model has an almost the same accuracy as the original 3D model. Furthermore, a reciprocity theory is introduced for the optimal designof a special structure used for flattening the spectral response of an AWG demultiplexer. In the second 3D simulation method, we combine a beam propagation method (BPM) and the Kirchhoff-Huygens diffraction formula. In this method, a 3D BPM in a polar coordinate system is used for calculating the light propagation in the region connecting the first FPR and the arrayed waveguides, and thus the coupling coefficient of each arrayed waveguide is calculated conveniently and accurately. In the simulation of the second FPR, due to the uniform arrangement of arrayed waveguides, only several arrayed waveguides are needed in the BPM window and thus the computational efficiency is improved.

Ort, förlag, år, upplaga, sidor
Stockholm: KTH, 2005. s. 61
Serie
TRITA-TET/DA, ISSN 0349-7836 ; 2005:01
Nyckelord
Electronics, waveguide, silicon-on-insulator (SOI), arrayed waveguide grating (AWG), Elektronik
Nationell ämneskategori
Annan elektroteknik och elektronik
Identifikatorer
urn:nbn:se:kth:diva-226 (URN)91-7178-076-9 (ISBN)
Disputation
2005-06-03, sal E3, Osquars backe 14, Stockholm, 10:00 (Engelska)
Opponent
Handledare
Anmärkning
QC 20101004Tillgänglig från: 2005-05-27 Skapad: 2005-05-27 Senast uppdaterad: 2010-10-04Bibliografiskt granskad

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He, Sailing

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Dai, DaoxinHe, Sailing
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Zhejiang-KTH Joint Research Center of Photonics, JORCEPTeoretisk elektroteknik
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Applied Optics
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