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Integration of TmSiO/HfO2 Dielectric Stack in Sub-nm EOT High-k/Metal Gate CMOS Technology
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0003-0333-376X
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0001-6705-1660
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0002-5845-3032
2015 (engelsk)Inngår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, nr 3, s. 934-939Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Integration of a high-k interfacial layer (IL) is a promising technological solution to improve the scalability of high-k/metal gate CMOS technology. We have previously demonstrated a CMOS-compatible integration scheme for thulium silicate (TmSiO) IL and shown excellent characteristics in terms of equivalent oxide thickness (EOT), interface state density, channel mobility, and threshold voltage control. Here, we report on optimized annealing conditions leading to gate leakage current density comparable with state-of-the-art SiOx/HfO2 nFETs (0.7 A/cm(2) at 1 V gate bias) at sub-nm EOT (as low as 0.6 nm), with near-symmetric threshold voltages (0.5 V for nFETs and -0.4 V for pFETs). We demonstrate an excellent performance benefit of the TmSiO/HfO2 stack, i.e., improved channel mobility over SiOx/HfO2 dielectric stacks, demonstrating high-field electron and hole mobility of 230 and 70 cm(2)/Vs, respectively, after forming gas anneal at EOT = 0.8 nm. Finally, the reliability of the TmSiO/HfO2/TiN gate stack is investigated, demonstrating 10-year expected life-times for both oxide integrity and threshold voltage stability at an operating voltage of 0.9 V.

sted, utgiver, år, opplag, sider
2015. Vol. 62, nr 3, s. 934-939
Emneord [en]
Bias temperature instability (BTI), CMOS, equivalent oxide thickness (EOT), HfO2, high-k, mobility, reliability, silicate, thulium, thulium silicate (TmSiO), time-dependent dielectric breakdown (TDDB)
HSV kategori
Identifikatorer
URN: urn:nbn:se:kth:diva-163458DOI: 10.1109/TED.2015.2391179ISI: 000350332000037Scopus ID: 2-s2.0-84923644871OAI: oai:DiVA.org:kth-163458DiVA, id: diva2:800953
Forskningsfinansiär
EU, European Research Council, OSIRIS 228229Swedish Foundation for Strategic Research
Merknad

QC 20150408

Tilgjengelig fra: 2015-04-08 Laget: 2015-04-07 Sist oppdatert: 2017-12-04bibliografisk kontrollert

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