Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Design exploration of graphene-FET based ring-oscillator circuits: A test-bench for large-signal compact models
Technical University of Catalonia.
STMicroelectronics.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.
KTH, Skolan för informations- och kommunikationsteknik (ICT), Integrerade komponenter och kretsar.ORCID-id: 0000-0003-3802-7834
Vise andre og tillknytning
2015 (engelsk)Inngår i: IEEE International Symposium on Circuits and Systems (ISCAS), IEEE Communications Society, 2015, s. 2716-2719Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

This paper presents a design-oriented characterization of ring-oscillator (RO) circuits based on complementary-inverters (INVs) implemented with graphene-FET (GFET) devices. A large-signal GFET compact model based on drift-diffusion transport is benchmarked at the circuit level against a second GFET compact model based on virtual source. Transient-based simulations of a 3-cell RO yield performance metrics in terms of operating frequency and voltage dynamic range. Against these metrics, a comprehensive design space exploration covering as input design variables parameters as GFET gate-oxide thickness tOX and channel-length L is presented. Methodologically, the work presents a general-purpose design framework, illustrated for ROs, which establishes a vertical circuit-device co-design environment. Its double-fold outcome is to provide guidelines both to bottom-up dimension and size the circuit, as well as top-down refine GFET device models and in turn GFET technology.

sted, utgiver, år, opplag, sider
IEEE Communications Society, 2015. s. 2716-2719
Serie
IEEE International Symposium on Circuits and Systems, ISSN 0271-4302
Emneord [en]
graphene, model, FET
HSV kategori
Forskningsprogram
Elektro- och systemteknik
Identifikatorer
URN: urn:nbn:se:kth:diva-177549DOI: 10.1109/ISCAS.2015.7169247ISI: 000371471002262Scopus ID: 2-s2.0-84946214853ISBN: 978-1-4799-8391-9 (tryckt)OAI: oai:DiVA.org:kth-177549DiVA, id: diva2:873225
Konferanse
IEEE International Symposium on Circuits and Systems (ISCAS)
Prosjekter
GRADE
Forskningsfinansiär
EU, FP7, Seventh Framework Programme, 317839
Merknad

QC 20151214

Tilgjengelig fra: 2015-11-23 Laget: 2015-11-23 Sist oppdatert: 2016-04-25bibliografisk kontrollert

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekstScopus

Personposter BETA

Rusu, Ana

Søk i DiVA

Av forfatter/redaktør
Rodriguez, SaulRusu, AnaLemme, Max
Av organisasjonen

Søk utenfor DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric

doi
isbn
urn-nbn
Totalt: 72 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf